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Ignas Nevinskas

Contact: ignas.nevinskas@gmail.com , ignas.nevinskas@ftmc.lt

The THz-TDS system price tag and compactness mostly leans on the laser.  The pulsed femtosecond 1.55 μm lasers are great candidates for this purpose and, therefore, semiconductor materials efficiently operating at this wavelength are being researched.

List of publications:

V. Pačebutas, A. Urbanowicz, P. Cicėnas, S. Stanionytė, A. Bičiūnas, I. Nevinskas and A. Krotkus, "Growth and characterization of quaternary (GaIn)(AsBi) layers for optoelectronic terahertz detector applications", Semiconductor Science and Technology, vol. 30, no. 9, p. 094012, 2015.

I. Nevinskas, S. Stanionytė, V. Pačebutas and A. Krotkus, "Terahertz emission from GaInAs P-I-N diodes photoexcited by femtosecond laser pulses", Lithuanian Journal of Physics, vol. 55, no. 4, 2016.

I. Nevinskas, A. Vizbaras, A. Trinkūnas, K. Vizbaras and A. Krotkus, "Magnetic field enhanced terahertz pulse emission from a femtosecond laser excited GaSb epitaxial layer", Electronics Letters, vol. 52, no. 19, pp. 1627-1629, 2016.

A. Krotkus, A. Arlauskas, R. Adomavičius, I. Nevinskas and V. Malevich, "Physical mechanisms of surface terahertz emission from semiconductors", International Society for Optics and Photonics, pp. 993405-993405-10, 2016.

I. Nevinskas, R. Butkutė, S. Stanionytė, A. Bičiūnas, A. Geižutis and A. Krotkus, "THz pulse emission from InAs-based epitaxial structures grown on InP substrates", Semiconductor Science and Technology, 31, 115021 1-6, 2016