Oğuz Tolga Çelik
I am a fourth-year PhD student in Electrical Engineering at Stanford University, advised by Amir Safavi-Naeini. I received my MS degree from Stanford University in June 2022 and my BS degree from Bilkent University in June 2019, both in Electrical Engineering.
Previously, I was an exchange student and continued as a research intern at EPFL in the spring and summer of 2018 under the supervision of Yusuf Leblebici. I worked on resistive random-access memories at EPFL. During my bachelor studies I worked as an undergraduate researcher at the National Nanotechnology Research Center (UNAM) in Bilkent University, where I studied impedimetric droplet sensing using microfluidics under the supervision of Çağlar Elbüken.
otcelik [at] stanford [dot] edu
Research Interests
My main research interests are integrated optics, quantum nonlinear optics and nanophotonics. I am recently working on the design, fabrication and characterization of electro-optic modulators for visible (456 nm) and near infrared (780 nm) light.
Selected work
Electro-optic intensity modulator: RF probe delivers electric field inducing a refractive index perturbation through the electro-optic effect in thin film lithium niobate. Optical fibers couple light in and out of waveguides through grating couplers.
Contact me at otcelik@stanford.edu
Publications
O. T. Celik, C. J. Sarabalis, F. M. Mayor, H. S. Stokowski, J. F. Herrmann, T. P. McKenna, N. R. A. Lee, W. Jiang, K. K. S. Multani, and A. H. Safavi-Naeini, "High-bandwidth CMOS-voltage-level electro-optic modulation of 780 nm light in thin-film lithium niobate," Opt. Express 2022, 30, 23177-23186.
DOI: 10.1039/C9LC00641A.A. Saateh, A. Kalantarifard, O. T. Celik, M. Asghari, M. Serhatlioglu, C. Elbuken, “Real-time Impedimetric Droplet Measurement (iDM)” Lab Chip 2019, 19, 3815-3824.
DOI: 10.1039/C9LC00641A.C. Giovinazzo, J. Sandrini, E. Shahrabi, O. T. Celik, Y. Leblebici, C. Ricciardi, "Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)" ACS Applied Electronic Materials 2019, 1 (6), 900-909.
DOI: 10.1021/acsaelm.9b00094.