Full Publication List of Prof. Hyungjin Kim

#Equal Contribution, *Corresponding Author 

International Journal Publications

1. Ajit Kumar, Mokurala Krishnaiah, Jinwoo Park, Dhananjay Mishra, Bidyashakti Dash, Hyeon-Bin Jo, Geun Lee, Sangwook Youn, Hyungjin Kim*, and Sung Hun Jin*, "Multibit, lead-free Cs2SnI6 resistive random access memory with self-compliance for improved accuracy in binary neural network application," Advanced Functional Materials, in press, doi: 10.1002/adfm.202310780.

2. Jinwoo Park, Sungjoon Kim, Min Suk Song, Sangwook Youn, Kyuree Kim, and Hyungjin Kim*, "Implementation of convolutional neural networks in memristor crossbar arrays with binary activation and weight quantization," ACS Applied Materials & Interfaces, vol. 16, no. 1, pp. 1054-1065, Jan. 2024, doi: 10.1021/acsami.3c13775.

3. Min Suk Song, Hwiho Hwang, Geun Ho Lee, Suhyeon Ahn, Sungmin Hwang, and Hyungjin Kim*, "Kernel mapping methods of convolutional neural network in 3D NAND flash architecture," Electronics, vol. 12, no. 23, p. 4796, Dec. 2023, doi: 10.3390/electronics12234796.

4. Sungmin Hwang, Junsu Yu, Min Suk Song, Hwiho Hwang, and Hyungjin Kim*, "Memcapacitor crossbar array with charge trap NAND flash structure for neuromorphic computing," Advanced Science, vol. 10, no. 32, p. 202303817, Nov. 2023, doi: 10.1002/advs.202303817.

5. Ji-Min Park, Hwiho Hwang, Min Suk Song, Seong Cheol Jang, Jung Hyun Kim, Hyungjin Kim*, and Hyun-Suk Kim*, "All-solid-state synaptic transistors with Li-ion-based electrolyte for linear weight mapping and update in neuromorphic computing system," ACS Applied Materials & Interfaces, vol. 15, no. 40, pp. 47229-47237, Oct. 2023, doi: 10.1021/acsami.3c09162. 

6. Myung-Hyun Baek and Hyungjin Kim*, "Polysilicon-channel synaptic transistors for implementation of short- and long-term memory characteristics," Biomimetics, vol. 8, no. 4, p. 368, Aug. 2023, doi: 10.3390/biomimetics8040368.

7. Hyunkyung Lee, Daeun Jung, and Hyungjin Kim*, "Peer assessment for engineering design education: An exploratory study," International Journal of Engineering Education, vol. 39, no. 3, pp. 732-742, May 2023, link.

8. Min Suk Song, Tae-Hyeon Kim, Hwiho Hwang, Suhyeon Ahn, Hussein Nili, and Hyungjin Kim*, "Optimization of random telegraph noise characteristics in memristor for true random number generator," Advanced Intelligent Systems, vol. 5, no. 5, p. 2200358, May 2023, doi: 10.1002/aisy.202200358. 

9. Geun Ho Lee, Tae-Hyeon Kim, Sangwook Youn, Jinwoo Park, Sungjoon Kim, and Hyungjin Kim*, "Low-fluctuation nonlinear model using incremental step pulse programming with memristive devices," Chaos, Solitons & Fractals, vol. 170, p. 113359, May 2023, doi: 10.1016/j.chaos.2023.113359.

10. Tae-Hyeon Kim, Kyungho Hong, Sungjoon Kim, Jinwoo Park, Sangwook Youn, Jong-Ho Lee, Byung-Gook Park, Hyungjin Kim*, and Woo Young Choi*, "Fuse devices for pruning in memristive neural network," IEEE Electron Device Letters, vol. 44, no. 3, pp. 520-523, Mar. 2023, doi: 10.1109/LED.2023.3237651.

11. Sangwook Youn, Sungjoon Kim, Tae-Hyeon Kim, Jinwoo Park, and Hyungjin Kim*, "Memristor crossbar circuit for ternary content-addressable memory with fine tuning operation", Advanced Intelligent Systems, vol. 5, no. 3, p. 2200325, Mar. 2023, doi: 10.1002/aisy.202200325. 

12. Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Hyungjin Kim*, and Byung-Gook Park*, "Enhanced current-voltage nonlinearity by controlling oxygen concentration of TiOx buffer layer for RRAM passive crossbar array,"  Journal of Semiconductor Technology and Science, vol. 22, no. 6, pp. 417-425, Dec. 2022, doi: 10.5573/JSTS.2022.22.6.417.

13. Geun Ho Lee, Min Suk Song, Sangwoo Kim, Jiyong Yim, Sungmin Hwang, Junsu Yu, Daewoong Kwon*, and Hyungjin Kim*, "Ferroelectric field-effect transistors for binary neural network with 3-D NAND architecture," IEEE Transactions on Electron Devices, vol. 69, no. 11, pp. 6438-6445, Nov. 2022, doi: 10.1109/TED.2022.3207130.

14. Woo Sik Choi, Min Suk Song, Hyungjin Kim*, and Dae Hwan Kim*, "Conduction mechanism analysis of abrupt- and gradual-switching InGaZnO memristors," Micromachines, vol. 13, no. 11, p. 1870, Oct. 2022, doi: 10.3390/mi13111870.

15. Sungjoon Kim, Jinwoo Park, Tae-Hyeon Kim, Kyungho Hong, Yeongjin Hwang, Byung-Gook Park*, and Hyungjin Kim*, "4-bit multilevel operation in overshoot suppressed Al2O3/TiOx RRAM crossbar array," Advanced Intelligent Systems, vol. 4, p. 2100273, May 2022, doi: 10.1002/aisy.202100273.

16. Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Jinwoo Park, Sangwook Youn, Jong-Ho Lee, Byung-Gook Park*, and Hyungjin Kim*, "Effect of program error in memristive neural network with weight quantization," IEEE Transactions on Electron Devices, vol. 69, no. 6, pp. 3151-3157, Jun. 2022, doi: 10.1109/TED.2022.3169112.

17. Woo Sik Choi, Donguk Kim, Tae Jun Yang, Inseok Chae, Changwook Kim, Hyungjin Kim*, and Dae Hwan Kim*, "Electrode-dependent electrical switching characteristics of InGaZnO memristor," Chaos, Solitons & Fractals, vol. 158, p. 112106, May 2022, doi: 10.1016/j.chaos.2022.112106.

18. Shinyoung Park, Sangwook Youn, Jun Tae Jang, Hyungjin Kim*, and Dae Hwan Kim*, "Effect of hydrogen migration in SiO2/Al2O3 stacked gate insulator of InGaZnO thin-film transistors," Crystals, vol. 12, no. 5, p. 594, Apr. 2022, doi: 10.3390/cryst12050594.

19. Geun Ho Lee, Tae-Hyeon Kim, Min Suk Song, Jinwoo Park, Sungjoon Kim, Kyungho Hong, Yoon Kim, Byung-Gook Park*, and Hyungjin Kim*, "Effect of weight overlap region on neuromorphic system with memristive synaptic devices," Chaos, Solitons & Fractals, vol. 157, p. 111999, Apr. 2022, doi: 10.1016/j.chaos.2022.111999.

20. Sungmin Hwang, Junsu Yu, Geun Ho Lee, Min Suk Song, Jeesoo Chang, Kyung Kyu Min, Taejin Jang, Jong-Ho Lee, Byung-Gook Park*, and Hyungjin Kim*, "Capacitor-based synaptic devices for hardware spiking neural networks," IEEE Electron Device Letters, vol. 43, no. 4, pp. 549-552, Apr. 2022, doi: 10.1109/LED.2022.3149029.

21. Woo Sik Choi, Jun Tae Jang, Donguk Kim, Tae Jun Yang, Changwook Kim, Hyungjin Kim*, and Dae Hwan Kim*, "Influence of Al2O3 layer on InGaZnO memristor crossbar array for neuromorphic applications," Chaos, Solitons & Fractals, vol. 156, p. 111813, Mar. 2022, doi: 10.1016/j.chaos.2022.111813.

22. Manh-Cuong Nguyen, Kitae Lee, Sihyun Kim, Sangwook Youn, Yeongjin Hwang, Hyungjin Kim*, Rino Choi*, and Daewoong Kwon*, "Incremental drain-voltage-ramping training method for ferroelectric field-effect transistor synaptic devices," IEEE Electron Device Letters, vol. 43, no. 1, pp. 17-20, Jan. 2022, doi: 10.1109/LED.2021.3127927.

23. Kyung Kyu Min, Junsu Yu, Yeonwoo Kim, Chae Soo Kim, Taejin Jang, Sungmin Hwang, Hyungjin Kim, Jong-Ho Lee, Daewoong Kwon*, and Byung-Gook Park*, "Ferroelectricity of pure-HfOx in metal-ferroelectric-insulator-semiconductor stacks and its memory application," Applied Surface Science, vol. 573, p. 151566, Jan. 2022, doi: 10.1016/j.apsusc.2021.151566.

24. Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Jinwoo Park, Yeongjin Hwang, Byung-Gook Park*, and Hyungjin Kim*, "Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system," Chaos, Solitons & Fractals, vol. 153, p. 111587, Dec. 2021, doi: 10.1016/j.chaos.2021.111587.

25. Jinwoo Park, Tae-Hyeon Kim, Sungjoon Kim, Geun Ho Lee, Hussein Nili, and Hyungjin Kim*, "Conduction mechanism effect on physical unclonable function using Al2O3/TiOx memristors," Chaos, Solitons & Fractals, vol. 152, p.111388, Nov. 2021, doi: 10.1016/j.chaos.2021.111388.

26. Junsu Yu, Kyung Kyu Min, Yeonwoo Kim, Sihyun Kim, Sungmin Hwang, Tae-Hyeon Kim, Changha Kim, Hyungjin Kim, Jong-Ho Lee, Daewoong Kwon*, and Byung-Gook Park*, "A novel physical unclonable function (PUF) using 16 × 16 pure-HfOx ferroelectric tunnel junction array for security applications," Nanotechnology, vol. 32, no. 48, p. 485202, Nov. 2021, doi: 10.1088/1361-6528/ac1dd5.

27. Shinyoung Park, Jun Tae Jang, Yeongjin Hwang, Hyunkyu Lee, Woo Sik Choi, Dongyeon Kang, Changwook Kim, Hyungjin Kim*, and Dae Hwan Kim*, "Effect of the gate dielectric layer of flexible InGaZnO synaptic thin-film transistors on learning behavior," ACS Applied Electronic Materials, vol. 3, no. 9, pp. 3972-3979, Sept. 2021, doi: 10.1021/acsaelm.1c00517.

28. Hyungjin Kim, Mahmood Reza Mahmoodi, Hussein Nili, and Dmitri B. Strukov*, "4k-memristor analog-grade passive crossbar circuit," Nature Communications, no. 12, p. 5198, Aug. 2021, doi: 10.1038/s41467-021-25455-0.

29. Dayoung Kim, Tae-Hyeon Kim, Yunyeong Choi, Geun Ho Lee, Jungwon Lee, Wookyung Sun, Byung-Gook Park, Hyungjin Kim*, and Hyungsoon Shin*, "Selected bit-line current PUF: A non-invasive hardware security primitive based on a memristor crossbar array," IEEE Access, no. 9, pp. 120901-120910, Aug. 2021,  doi: 10.1109/ACCESS.2021.3108534.

30. Yeongjin Hwang, Jeong Hoon Jeon, Juhyun Lee, Jonghyuk Yoon, Felix Sunjoo Kim*, and Hyungjin Kim*, "Effect of threshold voltage window and variation of organic synaptic transistor for neuromorphic system," Journal of Nanoscience and Nanotechnology, vol. 21, no. 8, pp. 4303-4309, Aug. 2021, doi: 10.1166/jnn.2021.19393. 

31. Geun Ho Lee, Sungmin Hwang, Junsu Yu, and Hyungjin Kim*, "Architecture and process integration overview of 3D NAND flash technologies," Applied Sciences, vol. 11, no. 15, p. 6703, Jul. 2021, doi: 10.3390/app11156703.

32. Tae-Hyeon Kim, Jaewoong Lee, Sungjoon Kim, Jinwoo Park, Byung-Gook Park*, and Hyungjin Kim*, "3-bit multilevel operation with accurate programming scheme in TiOx/Al2O3 memristor crossbar array for quantized neuromorphic system," Nanotechnology, no. 32, vol. 29, p. 295201, Jul. 2021, doi: 10.1088/1361-6528/abf0cc.

33. Sungmin Hwang, Hyungjin Kim*, and Byung-Gook Park*, "Quantized weight transfer method using spike-timing-dependent plasticity for hardware spiking neural network," Applied Sciences, vol. 11, no. 5, p. 2059, Feb. 2021, doi: 10.3390/app11052059. 

34. Sobia Ali Khan, Geun Ho Lee, Chandreswar Mahata, Muhammad Ismail, Hyungjin Kim*, and Sungjun Kim*, "Bipolar and complementary resistive switching characteristics and neuromorphic system simulation in a Pt/ZnO/TiN synaptic device," Nanomaterials, vol. 11, no. 2, p. 315, Jan. 2021, doi: 10.3390/nano11020315. 

35. Sungjoon Kim, Tae-Hyeon Kim, Hyungjin Kim* and Byung-Gook Park*, "Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM," Applied Physics Letters, vol. 117, no. 20, p. 202106, Nov. 2020, doi: 10.1063/5.0027757. 

36. Hyun-Seok Choi, Hyungjin Kim, Jong-Ho Lee, Byung-Gook Park, and Yoon Kim, "AND flash array based on charge trap flash for implementation of convolutional neural networks," IEEE Electron Device Letters, vol. 41, no. 11, pp. 1653-1656, Nov. 2020, doi: 10.1109/LED.2020.3025587. 

37. Jun Tae Jang, Jungi Min, Yeongjin Hwang, Sung-Jin Choi, Dong Myong Kim, Hyungjin Kim*, and Dae Hwan Kim*, "Digital and analog switching characteristics of InGaZnO memristor depending on top electrode material for neuromorphic system," IEEE Access, vol. 8, pp. 192304 -192311, Oct. 2020, doi: 10.1109/ACCESS.2020.3032188. 

38. Tae-Hyeon Kim, Hussein Nili, Min-Hwi Kim, Kyung Kyu Min, Byung-Gook Park*, and Hyungjin Kim*, "Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array," Applied Physics Letters, vol. 117, no. 15, p. 152103, Oct. 2020, doi: 10.1063/5.0021626.

39. Mahmood R. Mahmoodi, Zahra Fahimi, Shabnam Larimian, Hussein Nili, Hyungjin Kim, and Dmitri Strukov, "A strong physically unclonable function with >280 CRPs and <1.4% BER using passive ReRAM technology," IEEE Solid-State Circuits Letters, vol. 3, pp. 182-185, Jul. 2020, doi: 10.1109/LSSC.2020.3010255. 

40. Jun Tae Jang, Geumho Ahn, Sung-Jin Choi, Dong Myong Kim, Hyungjin Kim*, and Dae Hwan Kim*, "LRS retention fail based on joule heating effect in InGaZnO resistive-switching random access memory," Applied Physics Express, vol. 13, no. 5, p. 054004, May 2020, doi: 10.35848/1882-0786/ab88c1.

41. Hyungjijn Kim and Byung-Gook Park, "Solving overlapping pattern issues in on-chip learning of bio-inspired neuromorphic system with synaptic transistors," Electronics, vol. 9, no. 1, p. 13, Jan. 2020, doi: 10.3390/electronics9010013.

42. Myung-Hyun Baek, Taejin Jang, Hyungjin Kim, Jungjin Park, Min-Woo Kwon, Sungmin Hwang, Suhyeon Kim, Jeong-Jun Lee and Byung-Gook Park, "Grain boundary induced short-term memory effect in fully depleted thin-polysilicon devices," Japanese Journal of Applied Physics, vol. 58,  no. 10, p. 101004, Oct. 2019, doi: 10.7567/1347-4065/ab3e2c.

43. Sungmin Hwang, Hyungjin Kim, Min-Woo Kwon, Jungjin Park, and Byung-Gook Park, "An online learning method using spike-timing dependent plasticity for neuromorphic systems, " Journal of Nanoscience and Nanotechnology, vol. 19, no. 10, pp. 6776-6780, Oct. 2019, doi: 10.1166/jnn.2019.17120.

44. Sungjun Kim, Jia Chen, Ying-Chen Chen, Min-Hwi Kim, Hyungjin Kim, Min-Woo Kwon, Sungmin Hwang, Muhammad Ismail, Yi Li, Xiangshui Miao, Yao-Feng Chang, and Byung-Gook Park, "Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching," Nanoscale, vol.11, pp. 237-245, Jan. 2019, doi: 10.1039/C8NR06694A.

45. Mirko Prezioso#, Mohammad Mahmoodi#, Farnood Merrikh-Bayat#, Hussein Nili, Hyungjin Kim, Adrien Vincent, and Dmitri Strukov, "Spike-timing-dependent plasticity learning of coincidence detection with passively integrated memristive circuits," Nature Communications, vol. 9, p. 5311, Dec. 2018, doi: 10.1038/s41467-018-07757-y.

46. Sungmin Hwang, Hyungjin Kim*, Jungjin Park, Min-Woo Kwon, Myung-Hyun Baek, Jeong-Jun Lee, and Byung-Gook Park*, "System-level simulation of hardware spiking neural network based on synaptic transistors and I&F neuron circuits," IEEE Electron Device Letters, vol. 39, no. 9, pp. 1441-1444, Sept. 2018, doi: 10.1109/LED.2018.2853635.

47. Taejin Jang, Myung-Hyun Baek, Hyungjin Kim, and Byung-Gook Park, "An analysis of hole trapping at grain boundary or poly-Si floating-body MOSFET," Journal of Nanoscience and Nanotechnology, vol. 18, no. 9, pp. 6584-6587, Sept. 2018, doi: 10.1166/jnn.2018.15702.

48. Hyungjin Kim, Sihyun Kim, Hyun-Min Kim, Kitae Lee, Sangwan Kim, and Byung-Gook Park, "A 1T dynamic random access memory cell based on gated thyristor with surrounding gate structure for high scalability," Journal of Nanoscience and Nanotechnology, vol. 18, no. 9, pp. 5919-5924, Sept. 2018, doi: 10.1166/jnn.2018.15569.

49. Hyun-Min Kim, Dae Woong Kwon, Sihyun Kim, Kitae Lee, Junil Lee, Euyhwan Park, Ryoongbin Lee, Hyungjin Kim, Sangwan Kim, and Byung-Gook Park, "Volatile and nonvolatile characteristics of asymmetric dual-gate thyristor RAM with vertical structure," Journal of Nanoscience and Nanotechnology, vol. 18, no. 9, pp. 5882–5886, Sept. 2018, doi: 10.1166/jnn.2018.15570.

50. Sungjun Kim, Chih-Yang Lin, Min-Hwi Kim, Tae-Hyeon Kim, Hyungjin Kim, Ying-Chen Chen, Yao-Feng Chang, and Byung-Gook Park, "Dual functions of V/SiOx/AlOy/p++Si device as selector and memory," Nanoscale Research Letters, vol. 13, p. 252, Aug. 2018, doi: 10.1186/s11671-018-2660-9.

51. Hyungjin Kim#, Sungmin Hwang#, Jungjin Park, Sangdoo Yun, Jong-Ho Lee, and Byung-Gook Park, "Spiking neural network using synaptic transistors and neuron circuits for pattern recognition with noisy images," IEEE Electron Device Letters, vol. 39, no. 4, pp. 630-633, Apr. 2018, doi: 10.1109/LED.2018.2809661. (featured as "Editor's Picks" articles)

52. Tae-Hyeon Kim, Sungjun Kim, Hyungjin Kim, Min-Hwi Kim, Suhyun Bang, Seongjae Cho, and Byung-Gook Park, "Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device," Solid-State Electronics, vol. 140, pp. 51-54, Feb. 2018, doi: 10.1016/j.sse.2017.10.015.

53. Jeong-Jun Lee, Jungjin Park, Min-Woo Kwon, Sungmin Hwang, Hyungjin Kim, and Byung-Gook Park, "Integrated neuron circuit for implementing neuromorphic system with synaptic device," Solid-State Electronics, vol. 140, pp. 34-40, Feb. 2018 doi: 10.1016/j.sse.2017.10.012.

54. Hyun-Seok Choi, Dae-Hoon Wee, Hyungjin Kim, Sungjun Kim, Kyung-Chang Ryoo, Byung-Gook Park, and Yoon Kim, "3-D floating-gate synapse array with spike-time-dependent plasticity," IEEE Transactions on Electron Devices, vol. 65, no. 1, pp. 101-107, Jan. 2018, doi: 10.1109/TED.2017.2775233.

55. Hyungjin Kim, Min-Chul Sun, Sungmin Hwang, Hyun-Min Kim, Jong-Ho Lee, and Byung-Gook Park, "Fabrication of asymmetric independent dual-gate FinFET using sidewall spacer patterning and CMP processes," Microelectronic Engineering, vol. 185, pp. 29-34, Jan. 2018, doi: 10.1016/j.mee.2017.10.014.

56. Sungjun Kim, Hyungjin Kim, Sungmin Hwang, Min-Hwi Kim, Yao-Feng Chang, and Byung-Gook Park, "Analog synaptic behaviors of a silicon nitride memristor," ACS Applied Materials & Interfaces, vol. 9, no. 46, pp. 40420-40427, Nov. 2017, doi: 10.1021/acsami.7b11191.

57. Hyungjin Kim, Sungmin Hwang, Jungjin Park, and Byung-Gook Park, "Silicon synaptic transistor for hardware-based spiking neural network and neuromorphic system," Nanotechnology, vol. 28, no. 40, p. 405202, Oct. 2017, doi: 10.1088/1361-6528/aa86f8.

58. Hyungjin Kim, Myung-Hyun Baek, Sungmin Hwang, Jong-Ho Lee, and Byung-Gook Park, “Comparison of writing methods of single memory cell with volatile and nonvolatile memory functions,” Applied Physics Express, vol. 10, no. 6, p. 064201, Jun. 2017, doi: 10.7567/APEX.10.064201.

59. Jungjin Park, Min-Woo Kwon, Hyungjin Kim, Sungmin Hwang, Jeong-Jun Lee, and Byung-Gook Park, “Compact neuromorphic system with four-terminal Si-based synaptic devices for spiking neural networks,” IEEE Transactions on Electron Devices, vol. 64, no. 5, pp. 2438-2444, May 2017, doi: 10.1109/TED.2017.2685519.

60. Min-Woo Kwon, Sungjun Kim, Min-Hwi Kim, Jungjin Park, Hyungjin Kim, Sungmin Hwang, and Byung-Gook Park, "Integrate-and-fire (I&F) neuron circuit using resistive-switching random access memory (RRAM)," Journal of Nanoscience and Nanotechnology, vol. 17, no. 5, pp. 3038-3041, May 2017, doi: 10.1166/jnn.2017.14025.

61. Hyungjin Kim, Sungmin Hwang, and Byung-Gook Park, “Design optimization of 1T dynamic random access memory based on pillar type tunneling field-effect transistor with surrounding gate structure,” Journal of Nanoscience and Nanotechnology, vol. 17, no. 5, pp. 2906-2911, May 2017, doi: 10.1166/jnn.2017.14024.

62. Sungmin Hwang, Hyungjin Kim, Dae Woong Kwon, Jong-Ho Lee, and Byung-Gook Park, “Si1-xGex positive feedback field-effect transistor with steep subthreshold swing for low-voltage operation,” Journal of Semiconductor Technology and Science, vol. 17, no. 2, pp. 216-222, Apr. 2017, doi: 10.5573/JSTS.2017.17.2.216.

63. Jungjin Park, Hyungjin Kim, Min-Woo Kwon, Sungmin Hwang, Myung-Hyun Baek, Jeong-Jun Lee, Taejin Jang, and Byung-Gook Park, “Implementation of neuromorphic system with Si-based floating-body synaptic transistors,” Journal of Semiconductor Technology and Science, vol. 17, no. 2, pp. 210-215, Apr. 2017, doi: 10.5573/JSTS.2017.17.2.210.

64. Min-Woo Kwon, Myung-Hyun Baek, Jungjin Park, Hyungjin Kim, Sungmin Hwang, and Byung-Gook Park, “CMOS analog integrate-and-fire neuron circuit for driving memristor based on RRAM,” Journal of Semiconductor Technology and Science, vol. 17, no. 2, pp. 174-179, Apr. 2017, doi: 10.5573/JSTS.2017.17.2.174.

65. Hyungjin Kim, Sungmin Hwang, Jong-Ho Lee, and Byung-Gook Park, “Combination of volatile and non-volatile functions in a single memory cell and its scalability,” Japanese Journal of Applied Physics, vol. 56, no. 4S, p. 04CE06, Apr. 2017, doi: 10.7567/JJAP.56.04CE06.

66. Hyungjin Kim, Seongjae Cho, Min-Chul Sun, Jungjin Park, Sungmin Hwang, and Byung-Gook Park, “Simulation study on silicon-based floating body synaptic transistor with short- and long-term memory functions and its spike timing-dependent plasticity,” Journal of Semiconductor Technology and Science, vol. 16, no. 5, pp. 657-663, Oct. 2016, doi: 10.5573/JSTS.2016.16.5.657.

67. Hyungjin Kim and Byung-Gook Park, "A 1T-DRAM cell based on a tunnel field-effect transistor with highly-scalable pillar and surrounding gate structure," Journal of the Korean Physical Society, vol. 69, no. 3, pp. 323-327, Aug. 2016, doi: 10.3938/jkps.69.323.

68. Hyungjin Kim, Jong-Ho Lee, and Byung-Gook Park, "Asymmetric dual-gate-structured one-transistor dynamic random access memory cells for retention characteristics improvement," Applied Physics Express, vol. 9, no. 8, p. 084201, Aug. 2016, doi: 10.7567/APEX.9.084201.

69. Hyungjin Kim, Dae Woong Kwon, Min-Woo Kwon, Jungjin Park, and Byung-Gook Park, "Self-boosted tunnel field-effect transistor using nitride charge trapping layer for low supply voltage operation," Journal of Nanoscience and Nanotechnology, vol. 16, no. 5, pp. 5243-5246, May. 2016, doi: 10.1166/jnn.2016.12235.

70. Jungjin Park, Min-Woo Kwon, Hyungjin Kim, and Byung-Gook Park, "Neuromorphic system based on CMOS inverters and Si-based synaptic device," Journal of Nanoscience and Nanotechnology, vol. 16, no. 5, pp. 4709-4712, May. 2016, doi: 10.1166/jnn.2016.12234.

71. Sungjun Kim, Hyungjin Kim, Sunghun Jung, Min-Hwi Kim, Sang-Ho Lee, Seongjae Cho, and Byung-Gook Park, "Tuning resistive switching parameters in Si3N4-based RRAM for three-dimensional vertical resistive memory applications," Journal of Alloys and Compounds, vol. 663, pp. 419-423, Apr. 2016, doi: 10.1016/j.jallcom.2015.10.142.

72. Hyungjin Kim, Jungjin Park, Min-Woo Kwon, Sungmin Hwang, and Byung-Gook Park, "Multi-threshold voltages in ultra thin-body devices by asymmetric dual-gate structure," Japanese Journal of Applied Physics, vol. 55, no. 4S, p. 04ED01, Apr. 2016, doi: 10.7567/JJAP.55.04ED01.

73. Hyungjin Kim, Jungjin Park, Min-Woo Kwon, Jong-Ho Lee, and Byung-Gook Park, "Silicon-based floating-body synaptic transistor with frequency-dependent short- and long-term memories," IEEE Electron Device Letters, vol. 37, no. 3, pp. 249-252, Mar. 2016, doi: 10.1109/LED.2016.2521863.

74. Min-Woo Kwon, Hyungjin Kim, Jungjin Park, and Byung-Gook Park, "Integrate-and-fire neuron circuit and synaptic device using floating body MOSFET with spike timing- dependent plasticity," Journal of Semiconductor Technology and Science, vol. 15, no. 6, pp. 658-663, Dec. 2015, doi: 10.5573/JSTS.2015.15.6.658.

75. Rajeev Ranjan, Min-Woo Kwon, Jungjin Park, Hyungjin Kim, and Byung-Gook Park, "Neuron circuit using a thyristor and inter-neuron connection with synaptic devices," Journal of Semiconductor Technology and Science, vol. 15, no. 3, pp. 365-373, Jun. 2015, doi: 10.5573/JSTS.2015.15.3.365.

76. Min-Woo Kwon, Hyungjin Kim, Jungjin Park, and Byung-Gook Park, "Integrate-and-fire neuron circuit and synaptic device with floating body MOSFETs," Journal of Semiconductor Technology and Science, vol. 14, no. 6, pp. 755-759, Dec. 2014, doi: 10.5573/JSTS.2014.14.6.755.

77. Hyun Woo Kim, Jong Pil Kim, Sang Wan Kim, Min-Chul Sun, Garam Kim, Jang Hyun Kim, Euyhwan Park, Hyungjin Kim, and Byung-Gook Park, "Schottky barrier tunnel field-effect transistor using spacer technique," Journal of Semiconductor Technology and Science, vol. 14, no. 5, pp. 572-578, Oct. 2014, doi: 10.5573/JSTS.2014.14.5.572.

78. Min-Chul Sun, Hyun Woo Kim, Hyungjin Kim, Sang Wan Kim, Garam Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "VT-Modulation of planar tunnel field-effect transistors with ground-plane under ultrathin body and bottom oxide," Journal of Semiconductor Technology and Science, vol. 14, no. 2, pp. 139-145, Apr. 2014, doi: 10.5573/JSTS.2014.14.2.139.

79. Seongjae Cho, Joonsuk Park, Hyungjin Kim, Robert Sinclair, Byung-Gook Park, and James S. Harris Jr., "Effects of germanium incorporation on optical performances of silicon germanium passive devices for group-IV photonic integrated circuits," Photonics and Nanostructures - Fundamentals and Applications, vol. 12, no. 1, pp. 54-68, Feb. 2014, doi: 10.1016/j.photonics.2013.07.012.

80. Min-Chul Sun, Garam Kim, Jung Han Lee, Hyungjin Kim, Sang Wan Kim, Hyun Woo Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Patterning of Si nanowire array with electron beam lithography for sub-22 nm Si nanoelectronics technology," Microelectronic Engineering, vol. 110, pp. 141-146, Oct. 2013, 10.1016/j.mee.2013.03.023.

81. Min-Chul Sun, Sang Wan Kim, Hyun Woo Kim, Hyungjin Kim, and Byung-Gook Park, "Complementary-metal-oxide-semiconductor technology-compatible tunneling field-effect transistors with 14 nm gate, sigma-shape source, and recessed channel," Japanese Journal of Applied Physics, vol. 52, no. 6, p. 06GE06, Jun. 2013, doi: 10.7567/JJAP.52.06GE06.

82. Min-Chul Sun, Sang Wan Kim, Garam Kim, Hyun Woo Kim, Hyungjin Kim, and Byung-Gook Park, "Novel tunneling field-effect transistor with sigma-shape embedded SiGe sources and recessed channel," IEICE Transactions on Electronics, vol. E96-C, no. 5, pp. 639-643, May 2013, doi: 10.1587/transele.E96.C.639.

83. Seongjae Cho, Hyungjin Kim, Heesauk Jhon, In Man Kang, Byung-Gook Park, and James S. Harris, Jr., "Mixed-Mode simulation of nanowire Ge/GaAs heterojunction tunneling field-effect transistor for circuit applications," IEEE Journal of the Electron Devices Society, vol. 1, no. 2, pp. 48-53, Feb. 2013, doi: 10.1109/JEDS.2013.2256458.

84. Seongjae Cho, Hyungjin Kim, Min-Chul Sun, Byung-Gook Park, and James S. Harris, Jr., "Process considerations for 80-GHz high-performance p-i-n silicon photodetector for optical interconnect," Journal of Semiconductor Technology and Science, vol. 12, no. 3, pp. 370-376, Sept. 2012, doi: 10.5573/JSTS.2012.12.3.370.

85. Hyun Woo Kim, Jang Hyun Kim, Sang Wan Kim, Min-Chul Sun, Garam Kim, Euyhwan Park, Hyungjin Kim, Kyung Wan Kim, and Byung-Gook Park, "A novel fabrication method for the nanoscale tunneling field effect transistor," Journal of Nanoscience and Nanotechnology, vol. 12, no. 7, pp. 5592-5597, Jul. 2012, doi: 10.1166/jnn.2012.6261.

86. Min-Chul Sun, Garam Kim, Sang Wan Kim, Hyun Woo Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Co-integration of nano-scale vertical- and horizontal-channel metal-oxide-semiconductor field-effect transistors for low power CMOS technology," Journal of Nanoscience and Nanotechnology, vol. 12, no. 7, pp. 5313-5317, Jul. 2012, doi: 10.1166/jnn.2012.6226.

87. Seongjae Cho, Hyungjin Kim, Min-Chul Sun, In Man Kang, Byung-Gook Park, and James S. Harris, Jr., "Simulation study on scaling limit of silicon tunneling field-effect transistor under tunneling-predominance," IEICE Electronics Express, vol. 9, no. 9, pp. 828-833, May 2012, doi: 10.1587/elex.9.828.

88. Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Hyungjin Kim, and Byung-Gook Park, "Comparative study on top- and bottom-source vertical-channel tunnel field-effect transistors," IEICE Transactions on Electronics, vol. E95-C, no. 5, pp. 826-830, May 2012, doi: 10.1587/transele.E95.C.826.

89. Kyung-Chang Ryoo, Jeong-Hoon Oh, Sunghun Jung, Hyungjin Kim, and Byung-Gook Park, "Effects of conductive defects on unipolar RRAM for the improvement of resistive switching characteristics," IEICE Transactions on Electronics, vol. E95-C, no. 5, pp. 842-846, May 2012, doi: 10.1587/transele.E95.C.842.

90. Se Hwan Park, Yoon Kim, Wandong Kim, Joo Yun Seo, Hyungjin Kim, and Byung-Gook Park, "Novel three dimensional (3D) NAND flash memory array having tied bit-line and ground select transistor (TiGer)," IEICE Transactions on Electronics, vol. E95-C, no. 5, pp. 837-841, May 2012, doi: 10.1587/transele.E95.C.837.

91. Hyungjin Kim, Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, and Byung-Gook Park, "Study on threshold voltage control of tunnel field-effect transistors using VT-control doping region," IEICE Transactions on Electronics, vol. E95-C, no. 5, pp. 820-825, May 2012, doi: 10.1587/transele.E95.C.820.

92. Min-Chul Sun, Sang Wan Kim, Hyun Woo Kim, Garam Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Design of thin-body double-gated vertical-channel tunneling field-effect transistors for ultralow-power logic circuits," Japanese Journal of Applied Physics (JJAP), vol. 51, no. 4, p. 04DC03, Apr. 2012, doi: 10.1143/JJAP.51.04DC03. 

Domestic Journal Publications

1. Kyu Ree Kim, and Hyungjin Kim*, "Overview of GAAFET Process Flow and Key Modules (Gate-All-Around FET의 전체 공정 과정과 핵심 공정모듈 고찰)," Journal of The Institute of Electronics and Information Engineer (전자공학회논문지), vol. 59, no. 4, pp. 21-30, Apr. 2022, doi: 10.5573/ieie.2022.59.4.21.

International Conference Proceedings

1. Min Suk Song, Suhyeon Ahn, Hwiho Hwang, and Hyungjin Kim*, "Memcapacitor crossbar array with charge trapping layer for physical unclonable function in NAND flash architecture," in Proc. IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, pp. 12.2.1-4, Dec. 2023. 

2. Jinwoo Park, Sangwook Youn, Kyuree Kim, Jungjin Lee, and Hyungjin Kim, "Analysis of perofrmance impact by intrinsic variation of memristor with multilevel conductance in neuromorphic system," in Proc. Nano Korea Symposium, Goyang, Korea, July 2023.

3. (invited) Hyungjin Kim, "In-memory computing technologies using memory device and array architecture," in Proc. International Technical Conference on Circuits/Systems, Computers, and Communications (ITC-CSCC), Jeju, Korea, June 2023.

4. Jinwoo Park, Min Suk Song, Sangwook Youn, and Hyungjin Kim, "Effect of inherent variations depending on quantized weight in memristive neural network," in Proc. International Conference on Electronics, Information and Communication (ICEIC), Singapore, Feb. 2023.

5. Jinwoo Park, Tae-Hyeon Kim, Sungjoon Kim, Min Suk Song, Sangwook Youn, Kyungho Hong, Byung-Gook Park, and Hyungjin Kim*, "Highly reliable physical unclonable functions using memristor crossbar with tunneling conduction," in Proc. IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, pp. 18.3.1-4, Dec. 2022, doi: 10.1109/IEDM45625.2022.10019539.

6. Kyungho Hong, Sungjoon Kim, Tae-Hyeon Kim, Hyungjin Kim,  and Woo Young Choi,  "Extremely-Low-Power RRAM Array with Triple Tunneling Layers," in Proc. International Microprocesses and Nanotechnology Conference (MNC), Tokushima, Japan, Nov. 2022.

7. (invited) Hyungjin Kim, "Emerging memory devices and architecture sfor in-memory computing," in Proc. International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), Jeju, Korea, Nov. 2022.

8. Geun Ho Lee, Min Suk Song, and Hyungjin Kim, "Weight overlap effect for on-chip learning with memristor devices," in Proc. International Conference on Next Generation Computing (ICNGC), Jeju, Korea, Oct. 2022.

9. (invited) Jinwoo Park, Yeongjin Hwang, Sangwook Youn, Geun Ho Lee, Min Suk Song, and Hyungjin Kim, "Hardwareimplementation of artificial neural network with electronci devices," in Proc. International Symposium on the Physics of Semiconductors and Applications (ISPSA), Jeju, Korea, July 2022.

10. Sungjoon Kim, Tae-Hyeon Kim, Kyungho Hong, Hyungjin Kim*, and Byung-Gook Park, “Forming, compliance free operation in Al2O3/TiOx based RRAM array using naturally generated AlOx interlayer,” in Proc. IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, Hawaii, USA, Jun. 2022, doi: 10.1109/SNW56633.2022.9889049.

11. Junsu Yu, Sungmin Hwang, Hyungjin Kim*, and Byung-Gook Park, “Investigation of coupling effect on capacitor-based neural network,” in Proc. IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, Hawaii, USA, Jun. 2022, doi: 10.1109/SNW56633.2022.9889047.

12. Jinwoo Park, Min Suk Song, Geun Ho Lee, and Hyungjin Kim, "Hardware security primitive: Memristor-based physical unclonable function depending on device switching conduction mechanism," in Proc. Nano Convergence Conference (NCC), Gwangju, Gyeonggi, Korea, Jan. 2022.

13. Yeongjin Hwang, Sangwook Youn, and Hyungjin Kim, "Boundary binary neural network for advanced on-chip learning in neuromorphic system," in Proc. International Conference on Next Generation Computing (ICNGC), Jeju, Korea, Nov. 2021.

14. (invited) Hyungjin Kim, "On- and off-chip learnings in memristor crossbar array," in Proc. IEEE TENSYMP, Jeju, Korea, Aug. 2021.

15. (invited) Hyungjin Kim, "Memristor crossbar array with etching-down fabrication method," in Proc. International Conference on Electronics, Information and Communication (ICEIC), Jeju, Korea, Feb. 2021.

16. (invited) Hyungjin Kim, "Passively integrated memristive crossbar circuits and applications," in Proc. Nano Convergence Conference (NCC), Gwangju, Gyeonggi, Korea, Jan. 2021.

17. Mahmood Mahmoodi*, Hussein Nili*, Zahra Fahimi, Shabnam Larimian, Hyungjin Kim, and Dmitri Strukov*, "Ultra-low power physical unclonable function with nonlinear fixed-resistance crossbar circuits," in Proc. IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, pp. 30.1.1-4, Dec. 2019, doi: 10.1109/IEDM19573.2019.8993618.

18. Mahmood Mahmoodi*, Hyungjin Kim*, Zahra Fahimi, Hussein Nili, Leonid Sedov, Valentin Polishchuk, and Dmitri Strukov*, "An analog neuro-optimizer with adaptable annealing based on 64×64 0T1R crossbar circuit," in Proc. IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, pp. 14.7.1-4, Dec. 2019, doi: 10.1109/IEDM19573.2019.8993442.

19. Irina Kataeva, Shigeki Ohtsuka, Hussein Nili, Hyungjin Kim, Yoshihiko Osobe, Koichi Yako, and Dmitri Strukov, "Towards the development of analog neuromorphic chip prototype with 2.4 M integrated memristors," in Proc. IEEE International Symposium on Circuits and Systems (ISCAS), Saporo, Japan, May 2019, doi: 10.1109/ISCAS.2019.8702125.

20. Sungmin Hwang, Min-Woo Kwon, Myung-Hyun Baek, Suheon Kim, Jeesoo Chang, Hyungjin Kim, and Byung-Gook Park, "Reducing backflow currents in flash-based synapse array for neuromorphic systems," in Proc. IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, Hawaii, USA, pp. 165-166, Jun. 2018.

21. Hyungjin Kim, Myung-Hyun Baek, Sungmin Hwang, Taejin Jang, Hyun-Min Kim, and Byung-Gook Park, "Asymmetric dual-gate FinFETs for multiple applications and their fabrication method," in Proc. International Conference on Advanced Materials and Devices (ICAMD), Jeju, Korea, p. Po-Na17-055, Dec. 2017.

22. Hyungjin Kim, Min-Woo Kwon, Myung-Hyun Baek, Sungmin Hwang, Taejin Jang, Jeong-Jun Lee, and Byung-Gook Park, "A DRAM Cell Based on Gated-Thyristor with Surrounding Gate Structure for High Scalability," in Proc. Nano Korea Symposium, Goyang, Korea, Jul. 2017.

23. Jeong-Jun Lee, Min-Woo Kwon, Hyungjin Kim, Sungmin Hwang, and Byung-Gook Park, "Implementation of Inhibitory operation in Neuromorphic System," in Proc. IEEE Silicon Nanoelectronics Workshop (SNW), Kyoto, Japan, pp. 113-114, Jun. 2017, doi: 10.23919/SNW.2017.8242323.

24. Hyungjin Kim, Min-Woo Kwon, Myung-Hyun Baek, Sungmin Hwang, Sihyun Kim, Taejin jang, Jeong-Jun Lee, Hyun-Min Kim, Kitae Lee, and Byung-Gook Park, "Gated-thyristor DRAM cell with pillar channel structure," in Proc. IEEE Silicon Nanoelectronics Workshop (SNW), Kyoto, Japan, pp. 71-72, Jun. 2017, doi: 10.23919/SNW.2017.8242302.

25. Hyungjin Kim, Jong-Ho Lee, and Byung-Gook Park, "Combination of volatile and non-volatile functions in a single memory cell with independent asymmetric dual-gate structure," in Proc. International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan, pp. 95-96, Sept. 2016.

26. Hyungjin Kim and Byung-Gook Park, "A combined volatile-nonvolatile memory cell with asymmetric dual-gate structure," in Proc. International Vacuum Congress (IVC), Busan, Korea, p. 366, Aug. 2016.

27. Min-Woo Kwon, Jungjin Park, Hyungjin Kim, Sungmin Hwang, Jong-Ho Lee, and Byung-Gook Park, "CMOS analog integrate-and-fire neuron circuit for driving memristor based on RRAM," in Proc. Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Hakodate, Japan, pp. 479-481, Jul. 2016.

28. Sungmin Hwang, Hyungjin Kim, Dae Woong Kwon, Jong-Ho Lee, and Byung-Gook Park, "Si1-xGex positive feedback field-effect transistor with steep subthreshold Swing for low-voltage operation," in Proc. Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Hakodate, Japan, pp. 121-122, Jul. 2016.

29. Byung-Gook Park, Hyungjin Kim, Jungjin Park, Min-Woo Kwon, Sunghun Jung, and Min-Hwi Kim, "Devices and circuits for spiking neural networks," in Proc. Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Hakodate, Japan, pp. 23-26, Jul. 2016.

30. Jungjin Park, Hyungjin Kim, Min-Woo Kwon, Sungmin Hwang, and Byung-Gook Park, "Autonomous neuromorphic system with four-terminal Si-based synaptic devices," in Proc. Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Hakodate, Japan, pp. 254-257, Jul. 2016.

31. Jungjin Park, Hyungjin Kim, Min-Woo Kwon, Sungmin Hwang, and Byung-Gook Park, "Autonomous neuromorphic system with four-terminal Si-based synaptic devices," in Proc. International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC), Okiniwa, Japan, pp. 331-334, Jul. 2016.

32. Su-Hyun Bang, Sungjun Kim, Hyungjin Kim, Tae-Hyeon Kim, and Byung-Gook Park, "Self-rectifying resistive switching Characteristics in Cu/IGZO/Si structure," in Proc. International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC), Okinawa, Japan, pp. 323-326, Jul. 2016.

33. Hyungjin Kim, Sungmin Hwang, Dae Woong Kwon, Jong-Ho Lee, and Byung-Gook Park, “Back biasing effects in a feedback steep switching device with charge spacer,” in Proc. IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, Hawaii, USA, pp. 172-173, Jun. 2016, doi: 10.1109/SNW.2016.7578037.

34. Hyungjin Kim and Byung-Gook Park, "1T DRAM using pillar type tunnel field-effect transistor," in Proc. International Conference on Advanced Materials and Devices (ICAMD), Jeju, Korea, p. Po-De15-010, Dec. 2015.

35. Jungjin Park, Min-Woo Kwon, Hyungjin Kim, and Byung-Gook Park, "Autonomous neuromorphic system with four-terminal Si-based synaptic devices," in Proc. International Conference on Advanced Materials and Devices (ICAMD), Jeju, Korea, p. Po-De15-020, Dec. 2015.

36. 36. Min-Woo Kwon, Jungjin Park, Hyungjin Kim, and Byung-Gook Park, "Synaptic device and CMOS neuron circuit using floating body MOSFET with spike timing-dependent plasticity," in Proc. International Microprocesses and Nanotechnology Conference (MNC), Toyama, Japan, Nov. 2015.

37. Hyungjin Kim, Jungjin Park, Min-Woo Kwon, Sungmin Hwang, and Byung-Gook Park, "Multi-threshold voltages in ultra-thin-body devices by asymmetric dual-gate structure," in Proc. International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan, pp. 104-105, Sept. 2015, doi: 10.7567/SSDM.2015.PS-3-11.

38. Min-Woo Kwon, Hyungjin Kim, Jungjin Park, and Byung-Gook Park, "Boolean logic circuit implementation using multi-input floating-body MOSFET," in Proc. IEEE Silicon Nanoelectronics Workshop (SNW), Kyoto, Japan, pp. 65-66, Jun. 2015.

39. Min-Woo Kwon, Hyungjin Kim, Jungjin Park, and Byung-Gook Park, "Integrate-and-fire neuron circuit and synaptic device using floating body MOSFET with spike timing-dependent plasticity," in Proc. Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Jeju, Korea, pp. 324-325, Jun. 2015.

40. Hyungjin Kim, Jungjin Park, Min-Woo Kwon, and Byung-Gook Park, "Silicon-based synaptic transistor with nitride charge trapping layer," in Proc. International Conference on Electronics, Information and Communication (ICEIC), Singapore, pp. 441-442, Jan. 2015.

41. Min-Woo Kwon, Hyungjin Kim, Jungjin Park, Rajeev Ranjan, Jong-Ho Lee, and Byung-Gook Park, "Integrate-and-fire neuron circuit and synaptic device with a floating body MOSFET," in Proc. IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, Hawaii, USA, pp. 95-96, Jun. 2014, doi: 10.1109/SNW.2014.7348564.

42. Jungjin Park, Hyungjin Kim, Min-Woo Kwon, Rajeev Ranjan, and Byung-Gook Park, "Inhibitory synaptic transistor cell for neuromorphic application," in Proc. International Conference on Electronics, Information and Communication (ICEIC), Kota Kinabalu, Malaysia, pp. 24-25, Jan. 2014.

43. Seongjae Cho, Hyungjin Kim, Byung-Gook Park, and James S. Harris, Jr., "Si/Ge/AlGaAs heterojunction high hole mobility transistor," in Proc. International Conference on Advanced Materials and Devices (ICAMD), Jeju, Korea, pp. 425-425, Dec. 2013.

44. Rajeev Ranjan, Min-Chul Sun, Min-Woo Kwon, Hyungjin Kim, and Byung-Gook Park, "Neuron circuit using thyristor," in Proc. International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC), Yeosu, Korea, pp. 149-150, Jul. 2013.

45. Seongjae Cho, Hyungjin Kim, Byung-Gook Park, and James S. Harris, Jr., "Optical and electronic devices for monolithically integrated photonics circuits," in Proc. International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC), Yeosu, Korea, pp. 139-141, Jul. 2013.

46. Hyungjin Kim, Jungjin Park, Min-Chul Sun, Do-Bin Kim, and Byung-Gook Park, "Sensitization characteristics of silicon-based floating-body synaptic transistor (SFST)," in Proc. Nano Korea Symposium, Seoul, Korea, Jul. 2013.

47. Min-Woo Kwon, Hyungjin Kim, Jungjin Park, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Integrate-and-fire neuron CMOS circuit with a multi-input floating body MOSFET," in Proc. IEEE Silicon Nanoelectronics Workshop (SNW), Kyoto, Japan, pp. 113-114, Jun. 2013.

48. 25. Hyungjin Kim, Min-Woo Kwon, Jungjin Park, Min-Chul Sun, Rajeev Ranjan, Do-Bin Kim, and Byung-Gook Park, "Study on input biasing effects of silicon-based floating-body synaptic transistor (SFST)," in Proc. Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Seoul, Korea, pp. 270-271, Jun. 2013.

49. Seonghyun Paik, Seongjae Cho, Ken Leedle, Hyungjin Kim, Byung-Gook Park, and James S. Harris, Jr., "Design of high-power low-noise 2-D distributed feedback laser," in Proc. International Conference on Electronics, Information and Communication (ICEIC), Bali, Indonesia, pp. 288-289, Feb. 2013.

50. Seongjae Cho, Hyungjin Kim, Seonghyun Paik, In Man Kang, Jung-Hee Lee, Byung-Gook Park, and James S. Harris, Jr., "Germanium waveguide for on-chip optical interconnect," International Conference on Electronics, Information and Communication (ICEIC), Bali, Indonesia, pp. 226-227, Feb. 2013.

51. Seongjae Cho, Pascale El Kallassi, Hyungjin Kim, Byung-Gook Park, and James S. Harris, Jr., "In vitro optical fiber biosensor for integrated optical system," in Proc. International Conference on Electronics, Information and Communication (ICEIC), Bali, Indonesia, pp. 84-85, Feb. 2013.

52. Sungjun Kim, Hyungjin Kim, Sunghun Jung, Kyung-Chang Ryoo, Jeong-Hoon Oh, and Byung-Gook Park, "Investigation of gradual set and reset in Si3N4-based RRAM for MLC and neuromorphic device application," in Proc. International Conference on Electronics, Information and Communication (ICEIC), Bali, Indonesia, pp. 228-229, Feb. 2013.

53. Seongjae Cho, Sung Yun Woo, Hyungjin Kim, Jae Hwa Seo, Hwan Gi Lee, In Man Kang, Byung-Gook Park, and James S. Harris, Jr., "Low-standby power and high-performance InAs/InGaAs/InP heterojunction tunneling field-effect transistor," in Proc. International Conference on Electronics, Information and Communication (ICEIC), Bali, Indonesia, pp. 284-285, Feb. 2013.

54. Seongjae Cho, Hyungjin Kim, S. J. Ben Yoo, Byung-Gook Park, and James S. Harris, Jr., "Design optimization of an optically drivable heterogeneous MOSFET with silicon compatibility," in Proc. SPIE Photonics West, San Francisco, California, USA, p. 86191M, Feb. 2013.

55. Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Jung Han Lee, Hyungjin Kim, and Byung-Gook Park, "Threshold voltage of nanoscale Si gate-all-around MOSFET: short-channel, quantum, and volume effects," in Proc. IEEE International Nanoelectronics Conference (INEC), Singapore, pp. 27-29, Jan. 2013, doi: 10.1109/INEC.2013.6465943.

56. Seongjae Cho, Stanley Cheung, Changjae Yang, Hyungjin Kim, Euijoon Yoon, S. J. Ben Yoo, Byung-Gook Park, and James S. Harris, Jr., "1550-nm germanium light-emitting diode by momentum conservation transport," in Proc. International Symposium on Photonics and Electronics Convergence (ISPEC), Tokyo, Japan, p. 98, Dec. 2012.

57. Min-Chul Sun, Sang Wan Kim, Hyun Woo Kim, Hyungjin Kim, and Byung-Gook Park, "CMOS-compatible tunnel FETs with 14 nm gate, sigma-shape source, and recessed channel," in Proc. International Microprocesses and Nanotechnology Conference (MNC), Sapporo, Japan, p. 1P-7-34, Nov. 2012.

58. Min-Chul Sun, Garam Kim, Jung Han Lee, Hyungjin Kim, Sang Wan Kim, Hyun Woo Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Patterning of Si nanowire array with electron beam lithography for Sub-22nm Si nanoelectronics technology," in Proc. International Conference on Micro- and Nano-Engineering (MNE), Toulouse, France, p. 281, Sept. 2012.

59. Hyungjin Kim, Jung Han Lee, Garam Kim, Min-Chul Sun, and Byung-Gook Park, "Silicon-based floating-body synaptic transistor," in Proc. International Conference on Solid State Devices and Materials (SSDM), Kyoto, Japan, pp. 322-323, Sept. 2012, doi: 10.7567/SSDM.2012.PS-9-12.

60. Sang Wan Kim, Woo Young Choi, Won Bo Shim, Hyungjin Kim, Min-Chul Sun, Hyun Woo Kim, and Byung-Gook Park, "Study on the ambipolar behavior depending on the length of gate-drain overlap," in Proc. International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC), Sapporo, Japan, p. P-T3-09, Jul. 2012.

61. Sang Wan Kim, Woo Young Choi, Hyungjin Kim, Min-Chul Sun, Hyun Woo Kim, and Byung-Gook Park, "Investigation on hump effects of L-shaped tunneling field-effect transistors," in Proc. IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, Hawaii, USA, pp. 169-170, Jun. 2012, doi: 10.1109/SNW.2012.6243306.

62. Seongjae Cho, Hyungjin Kim, Min-Chul Sun, Theodore I. Kamins, Byung-Gook Park, and James S. Harris, Jr., "Simulation study on process conditions for high-speed silicon photodetector and quantum-well structuring for increased number of wavelength discriminations," in Proc. IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, Hawaii, USA, pp. 125-126, Jun. 2012, doi: 10.1109/SNW.2012.6243286 .

63. Min-Chul Sun, Sang Wan Kim, Garam Kim, Hyun Woo Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Novel tunneling field-effect transistor with sigma-shape embedded SiGe sources and recessed channel," in Proc. Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Okinawa, Japan, pp. 281-282, Jun. 2012.

64. Hyungjin Kim, Sang Wan Kim, Min-Chul Sun, Hyun Woo Kim, Garam Kim, Jang Hyun Kim, Euyhwan Park, and Byung-Gook Park, "Enhanced ambipolar characteristic of tunneling field-effect transistors using doped region," in Proc. International Conference on Electronics, Information and Communication (ICEIC), Jeongseon, Korea, pp. 279-280, Feb. 2012.

65. Seongjae Cho, Hyungjin Kim, Byung-Gook Park, and James S. Harris, Jr., "Frequency response of a common-source (CS) amplifier embedding Ge/GaAs heterojunction-based tunneling field-effect transistor (TFET)," in Proc. International Conference on Electronics, Information and Communication (ICEIC), Jeongseon, Korea, pp. 1-2, Feb. 2012.

66. Hyun Woo Kim, Jung Han Lee, Wandong Kim, Min-Chul Sun, Jang Hyun Kim, Garam Kim, Kyung Wan Kim, Hyungjin Kim, Joo Yun Seo, and Byung-Gook Park, "A tunneling field-effect transistor using side metal gate/high-k material for low power application," in Proc. International Semiconductor Device Research Symposium (ISDRS), College Park, Maryland, USA, Dec. 2011, doi: 10.1109/ISDRS.2011.6135286.

67. Min-Chul Sun, Sang Wan Kim, Garam Kim, Hyun Woo Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Modulation of transfer characteristics of Si nanowire tunnel FET on ultra-thin-body and BOX (UTBB) SOI substrate using back-gate bias," in Proc. International Semiconductor Device Research Symposium (ISDRS), College Park, Maryland, USA, Dec. 2011, doi: 10.1109/ISDRS.2011.6135269.

68. Garam Kim, Min-Chul Sun, Sang Wan Kim, Hyun Woo Kim, Jang Hyun Kim, Euyhwan Park, Hyungjin Kim, and Byung-Gook Park, "Novel MOSFET structure using p-n junction gate for ultra-low subthreshold-swing," in Proc. International Semiconductor Device Research Symposium (ISDRS), College Park, Maryland, USA, Dec. 2011, doi: 10.1109/ISDRS.2011.6135281.

69. Min-Chul Sun, Sang Wan Kim, Hyun Woo Kim, Garam Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Design of thin-body double-gated vertical-channel tunneling field-effect transistors for ultra-low power logic circuits," in Proc. International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, pp. 845-846, Sept. 2011, doi: 10.7567/SSDM.2011.D-4-2.

70. Hyun Woo Kim, Hyungjin Kim, Sang Wan Kim, Min-Chul Sun, Garam Kim, Euyhwan Park, Jang Hyun Kim, and Byung-Gook Park, "A novel fabrication method for nanoscale tunneling field-Effect transistor," in Proc. Nano Korea Symposium, Seoul, Korea, p. O1102_006, Aug. 2011.

71. Min-Chul Sun, Garam Kim, Sang Wan Kim, Hyun Woo Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Co-integration of nano-scale vertical- and horizontal-channel MOSFETs for low power CMOS technology," in Proc. Nano Korea Symposium, Seoul, Korea, p. O1101_010, Aug. 2011.

72. Garam Kim, Sang Wan Kim, Min-Chul Sun, Hyun Woo Kim, Hyungjin Kim, and Byung-Gook Park, "Tunneling field effect transistor with sidewall floating gate for ultra-Low subthreshold swing," in Proc. International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC), Gyeongju, Korea, pp. 306-307, Jun. 2011.

73. Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Comparative study on top- and bottom-source vertical-channel tunnel field-effect transistors," in Proc. Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Daejeon, Korea, pp. 87-89, Jun. 2011.

74. Hyungjin Kim, Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Threshold voltage control of tunnel field-effect transistors using VT-control doping region," in Proc. Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Daejeon, Korea, pp. 90-92, Jun. 2011.

Domestic Conference Proceedings

1. Hwiho Hwang, Min Suk Song, Suhyeon Ahn, Dayeon Yu, and Hyungjin Kim, "True random number generator using random telegraph noise of memristor," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Gyeongju, Korea, Jan. 2024.

2. Min Suk Song, Suhyeon Ahn, Hwiho Hwang, and Hyungjin Kim, "Physical unclonable function with memcapacitor crossbar rarray using NAND flash structure," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Gyeongju, Korea, Jan. 2024.

3. Sangwook Youn, Jinwoo Park, Kyuree Kim, Jungjin Lee, and Hyungjin Kim, "Effect of program error in memristor-based ternary content addressable memory," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Gyeongju, Korea, Jan. 2024.

4. Min Suk Song, Suhyeon Ahn, Hwiho Hwang, and Hyungjin Kim, "True random number generator using random telegraph noise characteristics of memristor," in Proc. ISE Summer Conference (반도체공학회 하계학술대회), Seoul, Korea, July 2023.

5. Sangwook Youn, Jinwoo Park, Kyuree Kim, Jungjin Lee, and Hyungjin Kim, "Effect of program error in memristor-based ternary content addressable memory (TCAM)," in Proc. ISE Summer Conference (반도체공학회 하계학술대회), Seoul, Korea, July 2023.

6. Jinwoo Park, Sangwook Youn, Kyu Ree Kim, Jungjin Lee, and Hyungjin Kim, "Optimization of strong physical unclonable function based on passive memristive crossbar array for highly reliable operation," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Jeongseon, Korea, Feb. 2023.

7. Min Suk Song, Geun Ho Lee, Hwiho Hwang, Suhyeon Ahn, and Hyungjin Kim, "Effect of on/off ratio of ferroelectric FET in binary neural network with 3-D NAND architecture," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Jeongseon, Korea, Feb. 2023.

8. Min Suk Song, Geun Ho Lee, Jinwoo Park, and Hyungjin Kim, "On/off ratio effect of FeFET with binary weight for neuromorphic system in 3-D NAND structure," in Proc. ISE Conference (반도체공학회 종합학술대회), Seoul, Korea, Dec. 2022.

9. (invited) Hyungjin Kim, "Processing-in-memory technologies with memory devices," in Proc. KSDT Spring Conference (한국반도체디스플레이기술학회 춘계학술대회), Incheon, Korea, May 2022.

10. Kang-Hwan Bae, Seung-Hyun Lim, Chaeseon Jeong, Geun Ho Lee, Sangwook Youn, Felix Sunjoo Kim, Hyungjin Kim, and Hyuck-In Kwon, "Lithium ion based IGZO synaptictransistor for highly linear weight update," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Jeongseon, Korea, Jan. 2022. 

11. Yeongjin Hwang, Sangwook Youn, and Hyungjin Kim, "Memristor-based binary neural network with boundary condition," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Jeongseon, Korea, Jan. 2022. 

12. Jinwoo Park, Min Suk Song, Geun Ho Lee, and Hyungjin Kim, "Evaluation of physical unclonable function performance depending on memristor conduction mechanism," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Jeongseon, Korea, Jan. 2022. 

13. (invited) Hyungjin Kim, "Memristor crossbar array and computing applications," in Proc. KSDT Fall Conference (한국반도체디스플레이기술학회 추계학술대회), Yongin, Korea, Nov. 2021.

14. Geun Ho Lee, Tae-Hyeon Kim, Yeongjin Hwang, Sungjoon Kim, Jinwoo Park, Byung-Gook Park, and Hyungjin Kim, "Recognition accuracy depending on weight-update overlap region of synaptic devices," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), virtual, Korea, Jan. 2021.

15. Jeong Hoon Jeon, Juhyun Lee, Jonghyuk Yoon, Yeongjin Hwang, Felix Sunjoo Kim, and Hyungjin Kim, "Effect of VT window and variation of organic synaptic transistor," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Jeongseon, Korea, p. 487, Feb. 2020. 

16. (invited) Hyungjin Kim, "Synaptic devices and neuron circuit for hardware-based neural network," in Proc. IEIE Summer Conference (대한전자공학회 하계학술대회), Jeju, Korea, June 2019.

17. Sungmin Hwang, Hyungjin Kim, Min-Woo Kwon, Jungjin Park, and Byung-Gook Park, "A proposal of learning method using spike-timing dependent plasticity for neuromorphic systems," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Jeongseon, Korea, p. 487, Feb. 2018. 

18. Hyungjin Kim, Sungmin Hwang, Seunghyun Kim, Myung-Hyun Baek, Jong-Ho Lee, and Byung-Gook Park, “Solving overlapping pattern issues by inhibitory synaptic transistors in bio-inspired neuromorphic system,” in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Jeongseon, Korea, p. 382, Feb. 2018. 

19. Jeong-Jun Lee, Jungjin Park, Hyungjin Kim, and Byung-Gook Park, "Learning with neuron-synapse connection in neuromorphic system," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Hongcheon, Korea, Feb. 2017.

20. Taejin Jang, Myung-Hyun Baek, Hyungjin Kim, and Byung-Gook Park, "An analysis of carrier trapping at grain boundary of polysilicon," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Hongcheon, Korea, Feb. 2017.

21. Suhyun Bang, Sungjun Kim, Hyungjin Kim, Tae-Hyeon Kim, and Byung-Gook Park, "Investigation on pulse operation of Cu/IGZO/Si structured ReRAM," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Hongcheon, Korea, Feb. 2017.

22. Jeong-Jun Lee, Jungjin Park, Hyungjin Kim, Min-Woo Kwon, Sungmin Hwang, and Byung-Gook Park, “Study on optimizing neuron circuit parameters for low-power consumption,” in Proc. IEIE Summer Conference (대한전자공학회 하계학술대회), Jeju, Korea, Jun. 2016.

23. Su-Hyun Bang, Sungjun Kim, Hyungjin Kim, Tae-Hyeon Kim, and Byung-Gook Park, "Synaptic device based on memristor using Cu/ITO/Si structure," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Jeongseon, Korea, Feb. 2016.

24. Tae-Hyeon Kim, Hyungjin Kim, Sungjun Kim, Su-Hyun Bang, and Byung-Gook Park, "Resistive switching characteristics of RRAM with WOx switching layer prepared by rapid thermal oxidation," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Jeongseon, Korea, Feb. 2016.

25. Min-Woo Kwon, Sungjun Kim, Min-Hwi Kim, Jungjin Park, Hyungjin Kim, and Byung-Gook Park, "Integrate-and-Fire (I&F) neuron circuit using resistive-switching random access memory (RRAM)," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Jeongseon, Korea, Feb. 2016.

26. Hyungjin Kim and Byung-Gook Park, "Effects of pocket doping concentration on 1T DRAM based on pillar type tunneling field-effect transistor with surrounding gate structure," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Jeongseon, Korea, Feb. 2016.

27. Sungmin Hwang, Hyungjin Kim, Dae Woong Kwon, and Byung-Gook Park, "Field-effect transistor for low subthreshold swing using positive feedback," in Proc. IEIE Fall Conference (대한전자공학회 추계학술대회), Wonju, Korea, pp.48-50, Nov. 2015.

28. Sungjun Kim, Sunghun Jung, Hyungjin Kim, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Minju Yun, Hee-Dong Kim, Seongjae Cho, and Byung-Gook Park, "SiO2-based resistive-switching random-access memory," in Proc. IEIE Fall Conference (대한전자공학회 추계학술대회), Wonju, Korea, pp.86-88, Nov. 2015.

29. Hyungjin Kim and Byung-Gook Park, "Self-boosted tunnel field-effect transistor using nitride charge trapping layer," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Incheon, Korea, p. 126, Feb. 2015.

30. Jungjin Park, Min-Woo Kwon, Hyungjin Kim, and Byung-Gook Park, "Neuromorphic system based on CMOS analog neuron circuit," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Incheon, Korea, p. 126, Feb. 2015.

31. Min-Woo Kwon, Hyungjin Kim, Jungjin Park, and Byung-Gook Park, "Integrate-and-fire neuron circuit and synaptic device with floating body MOSFETs," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Seoul, Korea, pp. 293-293, Feb. 2014.

32. Junil Lee, Hyungjin Kim, Min-Chul Sun, Sang-Ho Lee, Seunghyun Kim, Jungjin Park, and Byung-Gook Park, "Effect of body thickness on the performance of tunneling field-effect transistor," in Proc. IEIE Fall Conference (대한전자공학회 추계학술대회), Seoul, Korea, pp. 7-9, Nov. 2012.

33. Min-Woo Kwon, Hyungjin Kim, Sang-Ho Lee, and Byung-Gook Park, "Short channel effect of NAND flash memory using virtual source drain, with based on planar and FinFET structure," in Proc. IEIE Summer Conference (대한전자공학회 하계학술대회), Jeju, Korea, pp. 50-51, Jun. 2012.

34. Min-Chul Sun, Hyungjin Kim, Sang Wan Kim, Garam Kim, Hyun Woo Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, "Ground-plane doping for VT-modulation of planar tunnel field-effect transistors on ultra-thin-body and BOX (UTBB) SOI substrate," in Proc. Korean Conference on Semiconductors (한국반도체학술대회), Seoul, Korea, pp. 123-124, Feb. 2012.

Patents

1. Hyungjin Kim, Kyuree Kim, "Weight profiles for ising solver system (이징 문제 해결을 위한 가중치 프로파일 설계),"

• KR patent filed 10-2023-0172751, Dec. 1, 2023.

2. Hyungjin Kim, Hwiho Hwang, "Ternary content addressable memory using capacitive memory (커패시터 메모리를 사용하는 터너리 내용 주소화 메모리 장치),"

• KR patent filed 10-2023-0133567, Oct. 6, 2023.

3. Hyungjin Kim, Min Suk Song, Hwiho Hwang, "Memcapacitive array structure for vector matrix multiplication operation method thereof (벡터 행렬 곱셉을 위한 멤커패시터 어레이 구조 및 그 동작 방법),"

• KR patent filed 10-2022-0119298, Sept. 7, 2023.

4. Hyungjin Kim, Suhyeon Ahn, Min Suk Song, "3D stacked capacitor array string structure for physically unclonable function and operation method thereof (물리적 복제불가 함수를 위한 3차원 적층형 커패시터 어레이 스트링 구조 및 그 동작 방법),"

• KR patent filed 10-2023-0117171, Sept. 4, 2023.

5. Hyungjin Kim, Sangwook Youn, Jungjin Lee, "Memory element array structure and operation method for programmable threshold logic implementation (프로그래밍 가능한 임계값 논리 구현을 위한 메모리 소자 어레이 구조 및 그 동작 방법),"

• KR Patent filed 10-2023-0117170, Sept. 4, 2023.

6. Hyungjin Kim, Geun Ho Lee, Min Suk Song " 3D stacked synapse array string for artificial neural network (인공신경망 구현을 위한 3차원 적층형 시냅스 어레이 스트링),"

• KR Patent 10-2541000, Jun. 1, 2023.

• KR Patent filed 10-2022-0143504, 01 Nov. 2022.

7. Hyungjin Kim, Jinwoo Park, "Highly reliable physical unclonable function (고신뢰성 물리적 복제불가 함수 기술),"

• US patent 11,784,142 B1, Oct. 10, 2023.

• KR patent 10-2540990, Jun. 1, 2023.

• US patent filed 18/303,447, Apr. 19, 2023.

• JP patent filed 特願2023-065793, Apr. 13, 2023.

• KR Patent filed 10-2022-0070009, 09 Jun. 2022.

8. Hyungjin Kim, Yeongjin Hwang, "Learning method of binary artificial neural network using boundary value (경계값을 이용한 이진 인공신경망 학습 방법),"

• KR patent 10-2517156, Mar. 29, 2023.

• KR Patent filed 10-2021-0176534, Dec. 10 2021.

9. Byung-Gook Park, Sungmin Hwang, Junsu Yu, Hyungjin Kim, "Hardware-based artificial neural network device (하드웨어 기반 인공 신경망 제공 장치),"

• KR patent 10-2511526, Mar. 14, 2023.

• US patent 2023/0147403 A1, May 11, 2023.

• US patent filed 17/953/909, Sept. 27, 2022.

• PCT filed PCT/KR2022/010086, Jul. 12, 2022.

• KR patent filed 10-2021-0154893. Nov. 11, 2021.

10. Byung-Gook Park, Yoon Kim, Hyungjin Kim, Daehoon Wee, “Reconfigurable neuromorphic system and method of neural network configuration (재구성 가능한 뉴로모픽 시스템 및 이의 신경망 구성 방법),”

• KR Patent 10-2099242, Apr. 3, 2020.

• KR patent filed 10-2017-0100384. Aug. 8, 2017.

11. Byung-Gook Park, Yoon Kim, Hyungjin Kim, “Neuromorphic system, and memory device having stacked synapse elements connected in parallel (뉴로모깊 시스템, 및 기억 장치),”

• US patent 11,055,603 B2, Jul. 6, 2021.

• KR patent 10-1997868, Jul. 2, 2019.

• US patent filed, 15/643,902, Jul. 7, 2017.

• KR patent filed, 10-2017-0020130, Feb. 14, 2017.

12. Byung-Gook Park, Myung-Hyun Baek, Hyungjin Kim, Min-Woo Kwon, Sungmin Hwang, Taejin Jang, “Semiconductor device using grain boundary of semiconductor material as charge-storage node (반도체 물질의 입계를 전하저장소로 이용하는 반도체 소자),”

• KR patent 10-1965798, Mar. 29, 2019.

• KR patent filed, 10-2018-0142454, Nov. 19, 2018.

13. Byung-Gook Park, Hyungjin Kim, Sungmin Hwang, “Semiconductor device having asymmetrical dual gates and array thereof (비대칭 듀얼 게이트를 가진 반도체 소자 및 그 어레이),”

• KR patent 10-1894439, Aug. 28, 2018.

• KR patent filed 10-2016-0150246, Nov. 11, 2016.

14. Byung-Gook Park, Hyungjin Kim, “Semiconductor device having asymmetric dual-gate structure and fabrication method thereof (비대칭 듀얼게이트 구조를 갖는 반도체소자 및 그 제조방법),”

• KR patent 10-1707849, Feb. 13, 2017.

• KR patent filed, May 4, 2015.

15. Byung-Gook Park, Min-Woo Kwon, Hyungjin Kim, “Semiconductor circuit using floating body device for emulating neuron firing process (플로팅 바디 소자를 이용한 뉴런 발화동작 모방 반도체 회로),”

• US Patent 9,846,838 B2, Dec. 19, 2017.

• KR Patent 10-1528802, Jun. 9, 2015.

• US Patent filed 14/635,051, Mar. 2, 2015.

• KR Patent filed 10-2014-0026002, Mar. 5, 2014.

16. Byung-Gook Park, Hyungjin Kim, Garam Kim, Jung Han Lee, Min-Woo Kwon, “Synaptic semiconductor device and operation method thereof (시냅스 모방 반도체 소자 및 그 동작방법),”

• US patent 9,165,242 B2, Oct. 20, 2015.

• KR patent 10-1425857, Jul. 28, 2014.

• US patent filed 14/018,693, Sept. 5, 2013.

• KR patent filed 10-2012-0098767, Sept. 6, 2012.

Preprint

1. Zahra Fahimi#, Mohmood Reza Mahmoodi#,  Michael Klachko#, Hussein Nili, Hyungjin Kim, and Dmitri Strukov*, "Mitigating imperfections in mixed-signal neuromorphic circuits," online available at https://arxiv.org/abs/2107.04236, Jul. 2021.

2. Hyungjin Kim#*, Hussein Nili#, Mahmood Mahmoodi, and Dmitri Strukov*, "4k-memristor analog-grade passive crossbar circuit," online available at https://arxiv.org/abs/1906.12045, Jun. 2019.