Vissarion (Beso) Mikhelashvili

General Information

Personal Info

Date and place of birth	December 17, 1947, Georgia (former USSR)
Contact Info	Department of Electrical Engineering, Microelectronics Research Center, Technion, Haifa 32000, Israel Tel. +972-4-8293894 E-mail beso@ee.technion.ac.il

Areas of research interest
High-K ultra thin dielectric films for VLSI (processing technologies and physics).
Current flow mechanisms in MIS, MIM , MS , PN and PIN structures.
Blue, green and red light emitting semiconductor diodes (processing, technologies and physics).
Design and technology of multilayer optical stacks (anti reflection coatings, high reflection mirrors, band, short and long pass filters).
Quantum Dash and Quantum Well laser diodes and optical amplifiers (physics and design).

Academic Degrees

M.Sc.

1970

M.Sc. in electronics, Polytechnic Institute, Faculty of Physical Engineering, Tbilisi, GSSR;

A.F. Ioffe Physico-Technical Institute, Leningrad, USSR.

Ph.D.

1976

Ph.D, Institute of Semiconductors of the Academy of Sciences of UkSSR, Kiev.

Research Appointments

1992-present		The Optical Communication Laboratory (head Prof. Gadi Eisenstein), Department of Electrical Engineering, Technion-Israel Institute of Technology.
1986-1991		Head of Laboratory of Technology and Design of New Optoelectronic Structures and devices, Research Institute of Microelectronics (MION), Tbilisi, GSSR.
1983-1986		Head of Laboratory of Photoelectric and Luminescent Phenomena in semiconductor devices, Research Institute of Microelectronics, (MION) Tbilisi, GSSR.
	1976-1983	Senior Staff Scientist, Department of Optoelectronics Research Institute of Microelectronics (MION), Tbilisi, GSSR
	1973-1976	Ph.D. student, Member Research Staff, Department of Microelectronics and Optoelectronics, Institute of Semiconductors of the Academy of Science of UkSSR, Kiev.
	1970-1973	Member Research Staff, Department of Thin Dielectric films, Research Institute of Microelectronics (MION), Tbilisi, GSSR