• Xiaokang Shi, "Modeling and Optimization to Connect Nanoscale Layout with Silicon", Ph.D. Dissertation, 2009.
• Xiaokang Shi, "Non-Rectangular Gate Modeling for Nanoscale Devices and Circuits", M.S.E. Thesis, Dec 2008. (abstract)
  
• Xiaokang Shi, "Research on Ion Implantation Simulation and Fluctuations of Ultra-Shallow Junction", M.S. Thesis, May 2004. (abstract)
  
• Xiaokang Shi, "The effects of Zr content on the Fe near neighbor structures in FeZrB nano-amorphous ultrafine powders", B.S. Thesis, May 2001. (abstract)
  

1. Xiaokang Shi, Frank Liu, Sani Nassif, "****", IBM patent disclosure process (to be available in 2009)
2. Xiaokang Shi, Frank Liu, Sani Nassif, "****", US Patent, IBM Disclosure #***** (to be available in 2009)
3. Xiaokang Shi, Ming Li, Hao Shi, Min Yu, Ru Huang, Xing Zhang, Jinyu Zhang, Kunihiro Suzuki, Hideki Oka, "High speed method for ion implantation simulation with dose effect," Chinese Patent, No. 03109609.3. (abstract)
   
4. Xiaokang Shi, Hao Shi, Min Yu, Ru Huang, Xing Zhang, "Simulation method for fluctuations of ion implantation," Chinese Patent, No.03153740.5. (abstract)
   
5. Jinyu Zhang, Xiaokang Shi, Kunihiro Suzuki, Hideki Oka, "A rapid prediction method for predicting ion distribution," Chinese Patent, No. 200410003186.2. (abstract)
   
   

Conference: (19+1)

1. Frank Liu, and Sean X. Shi, "CORE: Computational optimization for resolution enhancement in sub-wavelength lithography," submitted to DAC 2010.
   
2. Sean X. Shi, Anand Ramalingam, Daifeng Wang, and David Z. Pan, "Latch Modeling for Statistical Timing Analysis," Design Automation Test in Europe (DATE), Munich, Germany, March 2008. (abstract)
3. Ashutosh Chakraborty, Sean X. Shi, David Z. Pan, "Layout Level Timing Optimization by Leveraging Active Area Dependent Mobility of Strained-Silicon Devices," Design Automation Test in Europe(DATE), Munich, Germany, March 2008. (abstract)
4. Sean X. Shi, Peng Yu, and David Z. Pan, "A Unified Non-Rectangular Device and Circuit Simulation Model for Timing and Power," in ICCAD, 2006. (abstract)
5. Peng Yu, Sean X. Shi, and David Z. Pan, "Process Variation Aware OPC with Variational Lithography Modeling," in DAC, 2006. (abstract)
   
6. Sean X. Shi, and David Z. Pan, "Wire Sizing and Shaping with Scattering Effect for Nanoscale Interconnection," in Proc. Asia South Pacific Design Automation Conference (ASPDAC), Jan. 2006.(abstract)
7. Min Yu, Rong Wang, Huihui Ji, Xiaokang Shi, Kai Zhan, Yang Yuan Wang, Jinyu Zhang, and Hideki Oka, "Defects in Ion Implantation and Annealing Studied by Atomistic Model," Proc. IEEE 7th International Conference on Solid-State and Integrated Circuits Technology (ICSICT), vol. 2, pp.1053-1056, Beijing, China, Oct. 2004. (abstract)
8. Rong Wang, Min Yu, Kai Zhan, Xiaokang Shi, Huihui Ji, Jinyu Zhang, and Hideki Oka, "A New Damage Model for Ion Implantation Simulation with Molecular Dynamics Method," Proc. IEEE 7th International Conference on Solid-State and Integrated Circuits Technology (ICSICT), vol. 2, pp.1061-1063, Beijing, China, Oct. 2004. (abstract)
9. Xiaokang Shi, Min Yu, Huihui Ji, Ru Huang, Xing Zhang, and Jinyu Zhang, "A New Simulation Method of Ion Implantation," in Proc. 4^th IEEE International Workshop on Junction Technology (IWJT’04), pp.309-312, Shanghai, China, Mar. 2004. (abstract)
10. Xiaokang Shi, Min Yu, Jun Yin, Guoyan Zhang, Ru Huang, and Xing Zhang, "A Precise and Efficient Analytical Method of Realistic Dopant Fluctuations in Shallow Junction Formation," in Proc. 4^th IEEE International Workshop on Junction Technology (IWJT’04), pp.305-308, Shanghai, China, Mar. 2004. (abstract)
11. Hao Shi, Xiaokang Shi, Min Yu, Ru Huang, Xing Zhang, Yang Yuan Wang, Kunihiro Suzuki, and Hideki Oka, "Atomic simulation of ion implantation into HfO2: LEACS vs. TSUPREM4," Proc. 4^th IEEE International Workshop on Junction Technology (IWJT’04), pp.331-334, Shanghai, China, Mar. 2004. (abstract)
12. Jinyu Zhang, Xiaokang Shi, Kunihiro Suzuki, and Hideki Oka, "Monte Carlo Amorphous Ion Implantation Possibility Algorithm," Proc. 4^th IEEE International Workshop on Junction Technology (IWJT’04), pp.302-304, Shanghai, China, Mar. 2004. (abstract)
13. Min Yu, Ru Huang, Xiaokang Shi, Huihui Ji, Xing Zhang, Yang Yuan Wang, and Hideki Oka, "Studying shallow junction technology by atomistic modeling," Proc. 4^th IEEE International Workshop on Junction Technology (IWJT’04), pp.297-301, Shanghai, China, Mar. 2004. (abstract)
14. Huihui Ji, Min Yu, Hao Shi, Xiaokang Shi, Ru Huang, Xing Zhang, Kunihiro Suzuki, and Hideki Oka, "Simulation of implantation into HfO2 by MD method," Proc. 4^th IEEE International Workshop on Junction Technology (IWJT’04), pp.313-316, Shanghai, China, Mar. 2004. (abstract)
15. Xiaokang Shi, Min Yu, Hao Shi, Ru Huang, Xing Zhang, Yang Yuan Wang, and Jinyu Zhang, "REACE: A New Algorithm for Low Energy Ion Implantation Simulation," Proc. MRS Fall Meeting 2003, vol.792, R6.9.1-6, Boston, USA, Dec. 2003. (abstract)
16. Xiaokang Shi, Hao Shi, Min Yu, Ru Huang, and Xing Zhang, "Discussion on Simulation Method of READE," Proc. the XII Three Beam (Electron, Ion, Photon) Conference, no. 46, pp.171-175, Beijing, China, 2003. (abstract)
17. Xiaokang Shi, Hao Shi, Min Yu, Ru Huang, and Xing Zhang, "A New MD Statistical Noise Improvement Algorithm for Dose Effect Simulation," presented at Peking University EECS Conference, Beijing, China, 2003. (abstract)
18. Xiaokang Shi, Min Yu, Ru Huang, and Xing Zhang, "Dose Effect in the Middle and Low Energy Ion Implantation Simulation," Proc. 5th National Symposium on SOI Technology, vol.2, no.6, pp.86-89, 2002 (abstract)
19. Hao Shi, Min Yu, Xiaokang Shi, Ru Huang, Kunihiro Suzuki, and Xing Zhang, "Simulation of ion implantation in HfO2 using a molecular dynamics method," Proc. 5th National Symposium on SOI Technology, vol.2, no.4, pp.76-80, 2002. (abstract)
20. Ru Huang, Min Yu, Hao Shi, Xiaokang Shi, Ming Li, Xing Zhang, Yang Yuan Wang, Kunihiro Suzuki, and Hideki Oka, "Molecular Dynamic Simulation of Low Energy Ion Implantation into silicon and HfO2 with new algorithm proposed and Kinetic Monte Carlo Simulation of Annealing with BED and TED characterized for Very Deep Sub-Micrometer Devices," the XIV International Conference on Ion Implantation Technology (IIT), New Mexico, USA, 2002. (abstract)
    

1. David Z. Pan, Peng Yu, Minsik Cho, Anand Ramalingam, Kiwoon Kim, Anand Rajaram and Sean X. Shi, "Design for Manufacturing Meets Advanced Process Control: A Survey", Journal of Process Control, Volume 18, Issue 10, Advanced Process Control for Semiconductor Manufacturing, First IFAC Workshop on Advanced Process Control for Semiconductor Manufacturing, Pages 975-984, December 2008. (abstract)
2. Peng Yu, Sean X. Shi, and David Z. Pan, "True Process Variation Aware OPC with Variational Lithography Modeling and Model Calibration," The Journal of Microlithography, Microfabrication, and Microsystems (JM3), Special Edition of Resolution Enhancement Techniques and Design for Manufacturability, September 2007. (abstract)
3. Jun Yin, Xiaokang Shi, and Ru Huang, "A New Method to Simulate Random Dopant Induced Threshold Voltage Fluctuations in Sub-50nm MOSFET’s with Non-uniform Channel Doping," Solid-State Electronics, vol. 50, No. 10, pp. 1551-1556, 2006. (abstract)
4. Xiaokang Shi, Min Yu, Hao Shi, Ru Huang, and Xing Zhang, "Dose Effect in the Low and Medium Energy Ion Implantation and Simulation Method," Chinese Journal of Semiconductors, vol.25, no. 3, pp.346-350, 2004. (abstract)
   
5. Xiaokang Shi, Hao Shi, Min Yu, Ru Huang, and Xing Zhang, "A New MD Statistical Noise Improvement Algorithm for Dose Effect Simulation," Journal (Natural Science) of Peking University, vol.40, no. 3 (201), pp.407-411, 2004. (abstract)
6. Huihui Ji, Min Yu, Hao Shi, Xiaokang Shi, Ru Huang, Xing Zhang, Jinyu Zhang, Kunihiro Suzuki, and Hideki Oka, "Molecular Dynamics Simulation of Ion Implantation into Hafnium Dioxide," Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 226, no. 4, pp.537-542, Dec. 2004. (abstract)