"Admitting error clears the score, and proves you wiser than before."
Arthur Guiterman, 1871-1943
Please email errors to sblisesivdin-AT-gmail.com
G. Atmaca et al. J. Optoelectron.
Adv. Mater. 11, 578 (2009).
Page 579, Fig. 4: "t
cr~b
e/e
xx" must be "
t
cr~b
e/2e
xx". Correct formula is used in calculations.
In addition, some alphas printed as empty squares, even after proof.
S. B. Lisesivdin and E. Ozbay, Optoelectron. Adv. Mater. -Rapid Comm. 3, 904 (2009).
Page 905, Fig. 4: "t
cr~b
ee
xx" must be " t
cr~b
e/2e
xx". Correct formula is used in calculations.
S. B. Lisesivdin et al. Superlatt. Microstruct. 45, 604 (2009).
Page 608, Fig. 4: "Sheet Carrier Density (cm
-3)" must be "Carrier Density (cm
-3)".
S. B. Lisesivdin et al. Opt. Adv. Mater. -Rapid Comm 1, 467 (2007).
Page 469, Table 1: Barrier thickness values above 15 (not included) must be shown in
italics.
S. B. Lisesivdin et al. Semicond. Sci. Technol. 22, 543 (2007).Page 547, paragraph 1, line 5: "10
-23 m
-3" must be "10
23 m
-3".
Page 547, Section 5, first paragraph, line 4: "analysed" must be "analyzed".
Page 548, References: "[35] Lisesivdin S B, Acar S and Kasap M 2007 Mat. Sci. Eng. B submitted". This article was not published in the Mat. Sci. Eng. B because of the important editorial change. Then we continued with the Appl. Phys. Lett. with some enhancements and new authors. True reference must be "S. B. Lisesivdin, A. Yildiz, S. Acar, M. Kasap, S. Ozcelik and E. Ozbay ”Electronic Transport Characterization of AlGaN/GaN HEMT Structures grown by MOCVD” Appl. Phys. Lett. 91, 102113 (2007)." This information was not known in the time of publication.