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You can find accepted and submitted articles at the Workbench. For the errata, please click. You can post errors to sblisesivdin-AT-gmail.com. The articles are copyrighted (©) by the respective publishers. DOI links are provided below. Please do not hesitate to contact to obtain author copies of the articles.
SCI Articles
2012
37.) E. Tiras, O. Celik, S. Mutlu, S. Ardali, S. B. Lisesivdin, E. Ozbay "Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures" Superlat. Microstruct. 51, 733 (2012).
36.) O. Celik, E. Tiras, S. Ardali, S. B. Lisesivdin, E. Ozbay "Determination
of the LO phonon energy and alloy scattering potential in AlGaN/GaN
HEMT’s" Cent. Eur. J. Phys. 10, 485 (2012).
201135.) O. Kelekci, S. B. Lisesivdin, S.Ozcelik, E. Ozbay "Numerical optimization of In-mole fraction and layer thicknesses in Al xGa 1-xN/AlN/GaN high electron mobility transistors with InGaN back barrier" Physica B 406, 1513 (2011). 34.) A. Yildiz, P. Tasli, B. Sarikavak, S. B. Lisesivdin, M. K.
Ozturk, M. Kasap, S. Ozcelik, E. Ozbay "Grain boundary related
electrical transport in Al-rich AlxGa1-xN layers grown by metal organic
chemical vapor deposition" Semiconductors+ 45, 33 (2011). 201033.) H. Yu, S. B. Lisesivdin, B. Bolukbas, O. Kelekci, M. K. Ozturk,
S. Ozcelik, D. Caliskan, M. Ozturk, H. Cakmak, P. Demirel and E. Ozbay
"Improvement of breakdown characteristics in AlGaN/GaN/Al xGa 1−xN HEMT based on a grading Al xGa 1−xN buffer layer" Phys. Stat. Sol. a 207, 2593 (2010). 32.) P. Tasli, B. Sarikavak, G. Atmaca, K. Elibol, A. F. Kuloglu and S. B.
Lisesivdin "Numerical Simulation of Novel Ultrathin Barrier
n-GaN/InAlN/AlN/GaN HEMT Structures: Effect of In Mole Fraction, Doping
and Layer Thicknesses" Physica B 405, 4020 (2010). 31.) A. Bengi, S. B. Lisesivdin, M. Kasap, T. Mammadov, S. Ozcelik, E.
Ozbay “Analysis of defect related optical transitions in AlGaN/GaN
heterostructures” Mater. Sci. Semicond. Process. 13, 105 (2010). 30.) S. B. Lisesivdin, A. Yildiz, N. Balkan, M. Kasap, S. Ozcelik, E.
Ozbay "Scattering Analysis of Two-dimensional Electrons in AlGaN/GaN
with Bulk Related Parameters Extracted by Simple Parallel Conduction
Extraction Method" J. Appl. Phys. 108, 013712 (2010). 29.) P. Tasli, A. Yildiz, M. Kasap, E. Ozbay, S. B. Lisesivdin and S.
Ozcelik "Contributions of the impurity band and electron–electron
interactions to the magnetoconductance of AlGaN" Philos. Mag. 90, 3591 (2010). 28.) S. B. Lisesivdin, P. Tasli, M. Kasap, M. Ozturk, E. Arslan, S.
Ozcelik, and E. Ozbay, "Double subband occupation of the
two-dimensional electron gas in In xAl 1-xN/AlN/GaN/AlN Heterostructures
with Low Indium Barrier (0.064 < x < 0.139)" Thin Solid Films 518, 5572 (2010). 27.) A . Yildiz, S. B. Lisesivdin, M. Kasap, D. Mardare “The substrate temperature effect on the electrical properties of titanium oxide thin films” J. Mater. Sci.: Mater. Electron. 21, 692 (2010).
26.) S. Gokden, R. Tulek, A. Teke, J. H. Leach, Q. Fan, J. Xie, U.
Ozgur, H. Morkoc, S. B. Lisesivdin, E. Ozbay "Mobility limiting
scattering mechanisms in nitride-based two-dimensional heterostructures
with InGaN channel" Semicond. Sci. Technol. 25, 045024 (2010). 25.) A. Yildiz, S. B. Lisesivdin, P. Tasli, E. Ozbay, and M. Kasap "Determination of the critical indium composition corresponding to the metal-insulating transition in InxGa1-xN (0.06 < x < 0.135) layers" Curr. Appl. Phys. 10, 838 (2010).
24.) A. Yildiz, S. B. Lisesivdin, M. Kasap, S. Ozcelik, E. Ozbay and N. Balkan "Investigation of low temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with SPCEM" Appl. Phys. A 98, 557 (2010).
23.) P. Tasli, S. B. Lisesivdin, A. Yildiz, M. Kasap, E. Arslan, E. Özbay, and S. Özcelik "Well parameters of the two-dimensional electron gas in Al0.88In0.12N/AlN/GaN/AlN heterostructures grown by MOCVD" Cryst. Res. Tech. 45, 133 (2010).
2009 22.) S. B. Lisesivdin,
E. Ozbay "Effect of various pseudomorphic AlN layer insertions on the
electron densities of two-dimensional electron gas in lattice-matched In0.18Al0.82N/GaN based heterostructures" Optoelectron. Adv. Mater.: Rapid. Comm. 3, 904 (2009).
21.) A. Yildiz, S. B. Lisesivdin, H. Altuntas, M. Kasap and S. Ozcelik "Electrical conduction properties of Si δ-doped GaAs grown by MBE" Physica B 404, 4202 (2009). 20.) G. Atmaca, K. Elibol, S. B. Lisesivdin, M. Kasap, E. Ozbay "Numerical optimization of Al-mole fractions and layer thicknesses in
normally-on AlGaN-GaN double-channel high electron mobility transistors
(DCHEMTs)" J. Optoelectron. Adv. Mater. 11, 578 (2009). 19.) A. Teke, S. Gökden, R. Tülek, J. H. Leach, Q. Fan, J. Xie, Ü. Özgür, H. Morkoç, S. B. Lisesivdin, E. Özbay, "The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures "New J. Phys. 11, 063031 (2009).
18.) S. B. Lisesivdin, N.
Balkan, O. Makarovsky, A. Patanè, A. Yildiz, M. D. Caliskan, M. Kasap,
S. Ozcelik, E. Ozbay "Large Zero-Field Spin Splitting in
AlGaN/AlN/GaN/AlN Heterostructures" J. Appl. Phys. 105, 093701 (2009). 17.) S. B. Lisesivdin,
H. Altuntas, A. Yildiz, M. Kasap, E. Ozbay, S. Ozcelik, "DX-center
Energy Calculation with Quantitative Mobility Spectrum Analysis in
n-AlGaAs/GaAs Structures with Low Al Content" Superlatt.
Microstruct. 45, 604 (2009).
16.) A. Yildiz, S. B. Lisesivdin, M. Kasap, D. Mardare "Non-adiabatic Small Polaron Hopping Conduction in Nb-doped TiO2 thin films" Physica B 404, 1423 (2009).
15.) Y. Sun, N. Balkan, M. Aslan, S. B. Lisesivdin, H. Carrere, M. C. Arikan, X. Marie "Electronic transport in n- and p-type modulation doped Ga xIn 1-xN yAs 1-y/GaAs Quantum Wells" J. Phys: Condens. Matt. 21, 174210 (2009) Invited Article.
14.) S. B. Lisesivdin, N. Balkan, E. Ozbay "A Simple Parallel Conduction Extraction Method (SPCEM) for MODFETs and Undoped GaN-based HEMTs" Microelectron. J. 40, 413 (2009).
13.) A. Yildiz, S. B. Lisesivdin, M. Kasap, M. Bosi "Anomalous resistivity behaviour in In 0.17Ga 0.83N" Solid State Commun. 149, 337 (2009). 2008
12.) A. Yildiz, S. B. Lisesivdin, M. Kasap, D. Mardare "Electrical Properties of TiO 2 Thin Films" J. Non-Crys. Solids 354, 4944 (2008).
11.) S. B. Lisesivdin, S. Demirezen, M. D. Caliskan, A. Yildiz, M. Kasap, S. Ozcelik and E. Ozbay "Growth parameters investigation of Al 0.25Ga 0.75N/GaN/AlN heterostructures with Hall Effect Measurements" Semicond. Sci. Technol. 23, 095008 (2008). 10.) E. Arslan, S. Butun, S. B. Lisesivdin, M. Kasap, S. Ozcelik, and E. Ozbay "The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates" J. Appl. Phys. 103, 103701 (2008). 9.) S. Acar, S. B. Lisesivdin, M. Kasap, S. Ozcelik and E. Ozbay "Determination of 2DEG and 2DHG carriers in AlGaN/GaN/AlN heterostructures grown by MOCVD" Thin Solid Films 516, 2041 (2008). 8.) A. Yildiz, F. Dagdelen, S. Acar, S. B. Lisesivdin, M. Kasap, Y. Aydogdu and M. Bosi "Stokes shift and bandgap bowing in In xGa 1-xN (0.060 ≤ x ≤ 0.105) grown by MOVPE" Acta Physica Pol. (a) 113, 731 (2008). 7.) S. B. Lisesivdin, E. Arslan, M. Kasap, S. Ozcelik and E. Ozbay, "Self-consistent scattering analysis of Al 0.2Ga 0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates using photo-Hall effect measurements" J. Phys.: Condens. Matt. 20, 045208 (2008). 20076.) S. B. Lisesivdin, A. Yildiz and M. Kasap, "Optimization of alloy composition, interlayer and barrier thicknesses in Al xGa 1-xN/(AlN)/GaN high electron mobility transistors" Opt. Adv. Mater.-Rapid Comm. 1 (9), 467 (2007). 5.) A. Yildiz, S. B. Lisesivdin, M. Kasap, D. Mardare "High temperature variable-range hopping conductivity in undoped TiO 2 thin film" Opt. Adv. Mater.-Rapid Comm. 1 (10), 531 (2007). 4.) A. Yildiz, S. B. Lisesivdin, S. Acar, M. Kasap and M. Bosi, "Electron transport in Ga-rich In xGa 1-xN alloys" Chin. Phys. Lett. 24, 2930 (2007). 3.) S. B. Lisesivdin, A. Yildiz, S. Acar, M. Kasap, S. Ozcelik and E. Ozbay "The Effect of Strain Relaxation on Electron Transport in Undoped Al 0.25Ga 0.75N/GaN HEMT Structures" Physica B 399 (2), 132 (2007). 2.) S. B. Lisesivdin, A. Yildiz, S. Acar, M. Kasap, S. Ozcelik and E. Ozbay "Electronic Transport Characterization of AlGaN/GaN HEMT Structures grown by MOCVD" Appl. Phys. Lett. 91, 102113 (2007). Selected for Virtual Journal of Nanoscale Science & Technology 16 12 (2007).1.) S. B. Lisesivdin, S. Acar, M. Kasap, S. Ozcelik, S. Gokden and E. Ozbay "Scattering Analysis of Extracted 2D carrier in AlGaN/GaN HEMT Structures" Semicond. Sci. Technol. 22, 543 (2007).
Non-SCI Articles20111.) Ozlem Celik, E. Tiras, S. Ardali, S. B. Lisesivdin, E.Ozbay
"Determination of the in-plane effective mass and quantum lifetime of 2D
electrons in AlGaN/GaN based HEMTs" Phys. Stat. Sol. (c) 8, 1625 (2011).
Proceedings
37.) P. Tasli, S. B. Lisesivdin, M. Kasap, S. Ozcelik, E. Ozbay "InAlN/GaN Temelli Yuksek Elektron Mobiliteli Transistörlerin (HEMT) Elektron ve Magneto Iletim Ozellikleri" ADIM Physics Congress II, 65 (2012).
36.) B. Sarikavak-Lisesivdin, S. B. Lisesivdin, E. Ozbay "AlGaN/GaN-temelli Yuksek Hareketlilige Sahip Transistorlerde InGaN Geribariyerin Dislokasyon Yogunluguna Etkisi" ADIM Physics Congress II, 131 (2012).
35.) A. F. Kuloglu, B. Alsancak, C. Gunes, S. B. Lisesivdin, E. Ozbay "Kenarlari Paladyum Atomlari ile Sonlandirilmis Farkli Genisliklerdeki Armchair Grafen Nanoseritlerin Elektronik Ozelliklerinin Yogunluk Fonksiyonu Teorisi Kullanilarak Incelenmesi" I. Solid State Matter Physics İzmir Meeting, p01 (2012).
34.) C. Günes, A. F. Kuloglu, S. B. Lisesivdin, E. Ozbay, "GaN-tabanli HEMT Yapilarin Hareketliligi ve Tasiyici Yogunlugunun Deneysel Incelenmesi" I. Solid State Matter Physics İzmir Meeting, p18 (2012).
33.) K. Elibol, C. Gunes, A. F. Kuloglu, E. Boyali and S. B. Lisesivdin "A Numerical Study on Effects of InAlN/AlGaN Barrier in InAlN/AlGaN/AlN/GaN-based High Electron Mobility Transistors" Turkish Physical Society XXVIII. International Conference, p711 (2011).
32.) K. Elibol, G. Atmaca, O. Kelekci, P. Tasli, E. Ozbay and S. B. Lisesivdin "Self-consistent Transport Properties of Graphene Sheets" Turkish Physical Society XXVIII. International Conference, p710 (2011).
31.) G. Karakoc, G. Atmaca, E. Yazbahar, P. Tasli and S. B. Lisesivdin "Numerical Investigation of Two-dimensional Electron Gas in AlGaN/AlN/GaN HEMT with InGaN/GaN Multi-quantum Well Structure" Turkish Physical Society XXVIII. International Conference, p745 (2011).
30.) K. Elibol, Ö. Kelekçi, G. Atmaca, S. B. Lişesivdin, M. Kasap, S. Özçelik and E. Özbay "Grafen Flake Üretim Yöntemlerinin Geliştirilmesi" XVII. Solid State Matter Physics Ankara Meeting, S2 (2010).
29.) G. Atmaca, K. Elibol, P. Taşlı, S. B. Lişesivdin and M. Kasap "Eklem Alan Etkili Transistörlerin Elektriksel Karakteristiklerinin İncelenmesi" XVII. Solid State Matter Physics Ankara Meeting, S12 (2010).
28.) Ö. Kelekçi, S. B. Lişesivdin, M. Kasap, S. Özçelik and E. Özbay "InGaN arka bariyerli AlxGa1-xN/AlN/GaN HEMT yapılarındaki ince filmlerin
alaşım oranları ve kalınlıklarının nümerik optimizasyonu" XVII. Solid State Matter Physics Ankara Meeting, S17 (2010).
27.) K. Elibol, G. Atmaca, P. Taşlı, S. B. Lişesivdin and M. Kasap "GaN Tabanlı MESFET Yapıların 2-boyutta Elektriksel Karakteristikleri" XVII. Solid State Matter Physics Ankara Meeting, P34 (2010).
26.) A. F. Kuloglu, S. B. Lişesivdin and M. Kasap "GaAs Tabanlı Bir MOSFET Yapının 2-Boyutta Akım – Gerilim Karakteristiklerinin İncelenmesi" XVII. Solid State Matter Physics Ankara Meeting, P88 (2010).
25.) O. Kartaloğlu, G. Atmaca, K. Elibol and S. B. Lişesivdin "Erbiyum Katkılı Eklem Diyotun I-V Karakteristiği" XVII. Solid State Matter Physics Ankara Meeting, P46 (2010).
24.) H. Yu, S. Lisesivdin,
B. Bolukbas, O. Kelekci, M. Ozturk, H. Cakmak, P. Demirel and E. Ozbay
"Double Heterostructure AlGaN/GaN/AlGaN HEMT Based on Grading AlGaN/AlN
Buffer Layer", 2009 MRS
Fall Meeting, I: III-Nitride Materials for Sensing, Energy Conversion,
and Controlled Light-Matter Interactions, SESSION I4: Surface and
Interface Properties II, I4.9 (2009).
23.) A. Ilgaz, S. Gokden, A. Teke, S. Ozcelik, S. B. Lisesivdin, E. Ozbay "Safir ve SiC Uzerine Buyutulmus AlGaN/AlN/GaN HEMT Yapilarindaki Sicak Elektron Dinamiginin Karsilastirilmasi" XVI. Solid State Matter Physics Ankara Meeting, P73 (2009).
22.) G. Atmaca, K. Elibol, P. Tasli, S. B. Lisesivdin, M. Kasap "Cift kanalli AlGaAs/InGaAs/GaAs tabanli p-HEMT Yapilarinda 1 ve 2-boyutta Schrödinger-Poisson Cozumleri ve Akim-Gerilim Incelemeleri" XVI. Solid State Matter Physics Ankara Meeting, P59 (2009).
21.) S. B. Lisesivdin, H. Altuntaş, A. Yıldız, M. Kasap, E. Ozbay, S. Ozcelik "Sicakliga ve manyetik alana bagli Hall olcumlerinin analizi ile DX-merkezi aktivasyon enerjisi hesabi" XVI. Solid State Matter Physics Ankara Meeting, S9 (2009).
20.) P. Tasli, S. B. Lisesivdin, A. Yildiz, M. Kasap, E. Ozbay "Determination of Two-Dimensional Electron and Hole Gas Carriers in Al0.88In0.12N/GaN-based Heterostructures Grown by Metal Organic Chemical Vapor Deposition" Turkish Physical Society XXVI. International Conference, p510 (2009).
19.) P. Tasli, S. B. Lisesivdin, M. Kasap, K. Elibol, G. Atmaca, E. Ozbay "A Numerical Study on Subband Structure of AlxIn1-xN/GaN-based HEMT Structures with Low-Indium (x>0.82) Barrier Layer" Turkish Physical Society XXVI. International Conference, p509 (2009).
18.) A. Yildiz, S. B. Lisesivdin, M. Kasap, S. Özçelik, D. Mardare "Small Polaron Transport In Titanium Dioxide Thin Film" Turkish Physical Society XXV. International Conference, p133 (2008).
17.) S. B. Lisesivdin, N. Balkan, O. Makarovsky, A. Patanè, A. Yildiz, M. D. Caliskan, M. Kasap, S. Ozcelik, E. Ozbay "Investigation of the Beating Pattern of Shubnikov-De Haas Oscillations and Spin Splitting in AlGaN/AlN/GaN/AlN Heterostructures" Turkish Physical Society XXV. International Conference, p484 (2008).
16.) K. Elibol, G. Atmaca, S. B. Lişesivdin, M. Kasap, S. Özçelik "Optimization of Al-mole Fraction and Layer Thicknesses in AlxGa1-xN/AlN/GaN/AlxGa1-xN/AlN/GaN Double Channel HEMT Structures" Turkish Physical Society XXV. International Conference, p454 (2008).
15.) S. B. Lisesivdin, N. Balkan, E. Ozbay, "A Simple Parallel Conduction Extraction Method for MODFET’s and Undoped GaN-based HEMTs" Workshop on Recent Advances of Low Dimensional Structures and Devices, p90 (2008).
14.) A. Yildiz, S. Eker, S. B. Lisesivdin, M. Kasap, S. Ozcelik, D. Mardare "On the conduction mechanism of TiO2" 8th International Conference on Physics of Advanced Materials, p28 (2008).
13.) A. Yildiz, H. Altuntas, S. B. Lisesivdin, A. Bengi and M. Kasap "Stokes shift in In0.13Ga0.87N epitaxial layer grown by MOVPE" Turkish Physical Society XXIV. International Conference, p152 (2007).
12.) H. Altuntas, S. B. Lisesivdin, A. Yildiz, T. Mammedov and S.Ozcelik "MBE Growth and Characterization of n-AlGaAs/GaAs Heterojunction" Turkish Physical Society XXIV. International Conference, p414 (2007). 11.) S. B. Lisesivdin, A. Yildiz, S. Acar, M. Kasap, S. Ozcelik, S. Gokden, E. Ozbay "Improved Scattering Analysis of 2DEG carriers in Al 0.25Ga 0.75N/GaN Heterostructures" NanoTr3 Conference Proceedings, p134 (2007). 10.) A. Yildiz, S. B. Lisesivdin, S. Acar, M. Kasap and D. Mardare "Electrical Conductivity Behaviour in Anatase Phase TiO 2" NanoTr3 Conference Proceedings, p151 (2007). 9.) A. Yildiz, S. B. Lisesivdin, S. Acar, and M. Kasap "Activation Mechanism in InGaN Grown By MOVPE" AIP Conf. Proc. 899 671 (2007). 8.) A. Yildiz, S. B. Lisesivdin, S. Acar, and M. Kasap "Mole Fraction Dependence Of Mobility In In xGa 1-xN Alloys" AIP Conf. Proc. 899 670 (2007). 7.) S. B. Lisesivdin and M. Kasap "Simulation of the Interfacial AlN Layer on Band Structures and Carrier Densities of AlGaN/GaN HEMT Structures" AIP Conf. Proc. 899 622 (2007). 6.) S. B. Lisesivdin, A. Yildiz, M. Kasap, and E. Ozbay "Strain Calculations from Hall Measurements in Undoped Al 0.25Ga 0.75N/GaN HEMT Structures" AIP Conf. Proc. 899 623 (2007). 5.) S. B. Lisesivdin, S. Acar, M. Kasap "Transport properties of the 2DEG and minority carriers in AlGaN/GaN HEMT Structures grown by MOCVD" XIII. Solid State Matter Physics Ankara Meeting, P-71, p104 (2006). 4.) S. Acar, S. B. Lisesivdin, M. Kasap "Two dimensional hole gas (2DHG) formation evidence in AlGaN/GaN/AlN HEMTs" XIII. Solid State Matter Physics Ankara Meeting, P-72, p105 (2006). 3.) S. B. Lisesivdin, S. Acar, M. Kasap and S. Ozcelik "QMSA Analysis and Effects of Extreme Space-Charge Scattering on the Mobility in III-V Systems grown by MBE" Turkish Physical Society XXIII. International Conference, p1214 (2005). 2.) S. B. Lisesivdin, U. Yurdugul, S. Demirezen, S. Acar and M. Kasap "Galvanomagnetic measurements of LEC grown Te-doped InSb" XI. Solid State Matter Physics Ankara Meeting, P-46, p79 (2004). 1.) I. Kara, S. B. Lisesivdin, S. Acar and M. Kasap "Temperature depence of magnetotransport and electrotransport properties of LEC grown S-doped InAs" XI. Solid State Matter Physics Ankara Meeting, P-34, p 67 (2004).
Seminars "AlGaN/GaN-temelli Yüksek Elektron Hareketliliğine Sahip Transistörlerin (HEMTs) Elektron ve Manyeto-iletim Özelliklerinin İncelenmesi" Department of Physics, Akdeniz University, Antalya, Turkey, May 28 th, 2008. "Investigation of 2DEG parameters in AlGaN/GaN based heterostructures using QMSA technique" Department of Computing and Electronic Systems, University of Essex, Colchester, UK, February 13 th, 2008.
Others S. B. Lisesivdin "Electron and Magneto Transport Properties of AlGaN/GaN Based High Electron Mobility Transistors (HEMT)" - Ph.D. Dissertation - (2008)
S. B. Lisesivdin "Transport Properties of InGaAs/GaAs and AlGaAs/GaAs Semiconductors Grown by MBE" Gazi University Institute of Science and Technology - M.Sc. Thesis - (2005).
S. B. Lisesivdin "Development of X-Ray Data Analysis Software for Windows Systems" Hacettepe University Physics Engineering - B.Sc. Thesis - (2002).
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