Intention Amplifiers within the Evolution of Intention Relevance Socialization Interface, done Internetedly
Å : Angstrom A-defects : Dislocation loops in silicon formed by agglomeration of interstitial AA: Atomic absorption AE : Acid etch AFM : Atomic force microscopy ALCVD : Atomic layer chemical vapor deposition AMC : Barrel or batch type epi reactor (Applied Materials) APCVD : Atmospheric:pressure chemical vapor deposition furnace ASIC : Application specific integrated circuit ASM : A single-chamber epi reactor (ASM America) ASTM : American Standard Test Method ASTM : American society for testing and materials
BESOI : Bonded and Etch Back SOI BGSOI : Bonded and Grind Back SOI BJT : Bipolar Junction Transistor BMD : Bulk Micro-defects or Bulk Micro-defect Density BOE : Buffered Oxide Etch Box : Buried Oxide Layer BP : Backside Polish BV : Breakdown Voltage Bvox : Breakdown Voltage-oxide
°C : Centigrade °C/min : Centigrade per minute CD : Critical dimension CE : Caustic Etch Cm : Centimeter (0.01 meter) CMOS : Complementary metal Oxide Semiconductor CMP : Chemical Mechanical Polishing CO : Carbon Monoxide CO² : Carbon Dioxide COO : Cost of Ownership COP’s : Crystal Originated Particles CoQC : Certificate of Quality Conformance CP : Crystal Puller CV : Capacity or capacitance voltage CVD : Chemical Vapor Deposition CZ : Czochralski method of pulling single crystal.
D-defects : Very small voids in Silicon formed by agglomeration of vacancies DIBL : Drain induced barrier lowering DIC : Differential interference contrast DL : Diffusion length DMOS : Double-diffused MOS DOE : Design of Experiments DOF : Depth of Focus DRAM : Dynamic Random Access memory Dsod : Direct Surface oxide Defect DSP : Double Sided Polish DZ : Denuded Zone
eDRAM : Embedded Dynamic Random Access Memory EG : Enhanced Gettering EEPROM : Electrically:erasable and Programmable Read-only Memory EPROM : Erasable and Programmable Read-only memory EOT : Equivalent Oxide Thickness EPI : Epitaxy ESF : Epi Stacking Fault
FBE : Floating Body Effect FET : Field Effect Transistor FD:SOI : Fully depleted silicon-on-Insulator FPD : Flow pattern Defect (ref. Crystal) FPD : Focal Plane Deviation (ref. Mechanical flatness) FRAM : Ferroelectric Random Access Memory FTIR : Fourier Transform Infra-Red Spectroscopy FZ : Float Zone method of Crystal Pulling
GBIR : Global flatness, back:referenced Ge OI: Germanium-on-Insulator GFA : Gas Fusion Analysis GOI : Gate Oxide Integrity GTIR : Global Total Indicated Reading GUI : Graphical User Interface
H²: Hydrogen Gas H²O² : Hydrogen Peroxide HCl: Hydrogen Chloride HF : Hydrofluoric Acid HMOS : High performance MOS HZ : Hot zone
IC : Integrated Circuit IDM : Integrated Device Manufacture IG : Internal Gettering IGBT : Insulated Gate Bipolar Transistor IQC : Incoming Quality Control ISO : Internation Standards Organization ITOX : Internal Oxidation
JFET : Junction Field Effect Transistor
kg: Kilogram kN : Kilo Newton KOH : Potassium Hydroxide KP : Kilo Pascal KSIE : Thousand Square Inch Equivalent
LAD : Large Area Defect Lg : Transistor Gate length LLS : Localized Light Scatterers LLPD’s : Large Light Point Defects LPCVD: Low Pressure Chemical Vapor Deposition LPD's : LIght Point Defects LPD-E : LIght Point Defect, class E (a KLA-Tencore SP1 defect class) LPD-N : Light Point Defect, class N (a KLA-Tencor SP1 defect class) LPD-S : Light Point Defect, class S (a KLA-Tencor SP1 defect class) LPE : Liquid Phase Epitaxy LSE : Latex Sphere Equivalent particle size LSI : Large scale integration LSTD : Laser Scattering Topographic Detection LTO : Low Temperature Oxide
M9K : MEMC Proprietary polishing machine MBE : Molecular Beam Epitaxy MDZ : Magic Denuded Zone (gettering) MEMS : Micro-ElectroMechanical System MIM : Metal-Insulator:Metal MLD : Modified Low Dose mm : 1/1000 of a meter and 0.03937 inch mm/min : Millimeters per minute MNOS : Metal Nitride Oxide Semiconductor MOCVD : MetalOrganic Chemical Vapor Deposition MODFET : Modulation-Doped Field Effect Transistor MOS : Metal Oxide Semiconductor MOSFET : Metal Oxide Semiconductor Field Effect Transistor MRAM : Magneto resistive Random Access Memory MSI : Medium-scale integration MSIE : Million Square Inch Equivalent
N : Silicon doped to create excess negative charge carriers (electrons) N+ : Heavily doped, N-type silicon NT : Nanotopography N² : Nitrogen gas nm : Nanometers NMOS : N-channel Metal Oxide Semiconductor NPT : Non-Punch Through
O² : Oxygen Oi: Interstitial Oxygen OISF : Oxidation:Induced Stacking Fault OPP : Optical Precipitate Profiler OUM : Ovonics Undivided Memory
P : Silicon doped to create excess positive charge carriers (holes) P- : Lightly doped P:type silicon wafer P+ : Heavily doped P-type silicon wafer P/P+ : Lightly doped P-type epi layer on a heavily doped P-type substrate P/P- : Lightly doped P-type epi layer on a lightly doped P-type substrate P-band : Anomalous oxygen precipitation region in vicinity of the vacancy/interstitial boundary PD-SOI : Partially Depleted Silicon-on-Insulator PECVD : Plasma Enhanced Chemical Vapor Deposition Furnace PFRAM : Polymeric Ferro electric Random Access memory PFZ : Precipitate Free Zone (depth measured from the surface that is free of oxygen precipitates but not necessarily depleted in interstitial oxygen) PMOS : P-channel Metal Oxide Semiconductor PPB : Parts Per Billion PPC : Post Polish Clean PPE : Personal Protective Equipment PPM : Parts per Million PPMA : Parts Per Million Atomic PPMD : Parts Per Million Defective PPT : Parts per Trillion PROM : Programmable Read:only Memory PT : Punch Through P/V : Peak to Valley measurement PZT : Lead Zirconate Titanate
RAM : Random Access Memory RF : Radio Frequency RFCMOS : Radio-Frequency Complementary Metal Oxide Semiconductor ROM : Read:only Memory RSD : Raised Source/Drain RTA : Rapid Thermal Anneal RTP : Rapid Thermal Process
SAC : Sub micron Application Crystal SBIR : Site Flatness, back-referenced SBSD : Soft Backside Damage SC1 : 1st cleaning bath in the standard "RCA clean" sequence, consisting of solutions designed to remove particles from Si surface SC2 : 2nd cleaning bath in the standard "RCA clean" sequence, consisting of solutions designed to remove particles from Si surface SCE : Short Channel Effects SEM : Scanning Electron Microscope SFQR : Site flatness, best:fit, front-referenced SFSR : Site flatness, best:fit, front-referenced, scanning site SGOI : Strained Si on SiGe on Insulator Si : Silicon SIE : Square Inch Equivalent SIMOX : Separation by Implantation of Oxygen SIMS : Secondary Ion Mass Spectroscopy SiO : Silicon Monoxide SiO² : Silicon Dioxide SIP : Single Inline Package SIRM : Scanning Infra:red Microscope SoC : System-on-a-Chip SOI : Silicon:on:Insulator SOS : Silicon-on-Sapphire SPT : Soft Punch Through SPV : Surface Photovoltage SRAM : Static Random Access Memory SRP : Spreading Resistance Probe or Spreading Resistance Profile SSI : Small-scale integration sSi : Strained Silicon SSIS : Surface Scanning Inspection System SSOI : Strained Silicon directly on Insulator SSP : Single Side Polish STD : Standard STD CZ : Standard Czochralski-grown Crystal STI : Shallow Trench Isolation STIR : Site TIR (Total Indicated Reading)
T: Temperature TCS : Trichlorosilane TEM : Transmission Electron Microscope TIR : Total Indicated Reading TOX : Gate Oxide Thickness Tsoi : Thickness of SOI top Si Layer TSOP : Thin Small Outline Package TTV : Total Thickness Variation
ULSI : Ultra Large:scale Integration
v/G : v: growth rate (crystal pulling rate), G: Vertical temperature gradient at melt/solid interface VI : Vacancy Interstitial VLSI : Very Large-scale Integration VPE : Vapor Phase Epitaxy
WRFTIR : Whole Rod Fourier Transform Infra-Red Spectroscopy
XTL : Crystal
ZD : Zero Dislocation |
