Publications

 Return to Dr. Hasan M Nayfeh's web page Dr. Hasan Nayfeh


         2011
  • (30) R. Arora,  S. Seth, J.C.H. Poh, J. D. Cressler, A.K. Sutton, H. M. Nayfeh, G.L. Rosa,  G. Freeman, "Impact of Source/Drain contact and gate finger spacing on the RF reliability of 45-nm RF nMOSFETs"   2011 Reliability Physics Symposium, Apri. 2011.                                                                
          
  •  (29) R. Arora, En Xia Zhang, S. Seth, J. D. Cressler, D.M. Fleetwood, R.D. Schrimpf, G.L. Rosa, H.M. Nayfeh, G. Freeman, "Trade-Offs Between RF Performance and Total-Dose Tolerance in 45-nm RF-CMOS, IEEE Transactions on Nuclear Science", Vol. 58, No. 6, pp. 2830-7   

        2010

  • (28) N. Wadje, V. Neeli, R. P. Jindal, H. M. Nayfeh, R. Todi, “Investigation of kink-induced RF  Channel Noise in sub-100nm PDSOI MOSFETs, 2010 IEEE SOI Conference.
  • (27) R. Arora, K. Moen, A. Madan, J. Cressler, A.K. Sutton, H. M. Nayfeh, “Impact of Body Tie and S/D Contact Spacing on The Hot Carrier Reliability of 45-nm RF MOSFETS”, 2010 CMOS IIRW Conference.

 

       2009

  • (26)  H. M. Nayfeh, N. Rovedo, A. Bryant*, S. Narasimha, A. Kumar, X. Yu, Y. Lee, A. Kumar**, J. Sleight** R. Robison*, N. Su, J. Yu, W. Rausch, H. Mallela, G. Freeman,  Impact of Asymmetric Doping on Nanoscale  n-type MOSFETs and Circuit Performance,  IEEE Transactions on Electron Devices,  December. 2009. asymmetric_TED.pdf

     2008

  • (25) H. M. Nayfeh, Channel Strain Engineering for High Performance CMOS Technology, 2008 IEEE RTP Conference Channel_Strain_HPCMOS_Tech_HMNAYFEH_.pdf

  • (24) X. Ouyang, S. J. Jeng, I.  Ahsan, A. Waite, K. Barth, H. M. Nayfeh, Y.  Wang, "Yield Monitor for Embedded-SiGe Process Optimization" 2008 ICSICT Conference. eSiGemonitorICSICT.pdf

  • (23) J. R. Holt, E. C. Harley, T. N. Adam, S. J. Jeng, K. Tabakman, R. Pal, H. M. Nayfeh, L. Black, J. Kempisty, M. Stoker, D. Schepis, "SiGe Selective Epitaxy: Process Development for High Performance 45nm CMOS Technology" Proceedings of the 2008 ECS Conference  ECS_2008.pdf

          2007

  • (22) B. Yang, A. Waite, H. Yin*, J. Yu*, L. Black, D. Chidambarrao*, A. Domenicucci*, X. Wang*, S.H. Ku*, Y. Wang*, H.V. Meer, B. Kim*, H. M. Nayfeh*, S.D. Kim*, K. Tabakman*, R. Pal, K. Nummy*, B. Grene*, P. Fisher, J. Liu*, Q. Liang*, J. Holt*, S. Nrasimha*, Z. Luo*, H. Utomo*, X. Chen*, D. Park*, C.Y. Sung*, R. Wachnik*, G. Freeman*, D. Schepis*, E. Maciejewski*, M. Khare*, E. Leobandung*, S. Luning, P. Agnello*,  (110) Channel, SiON Gate-Dielectric PMOS with Record High Ion=1 mA/um Through Channel Stress and Source Drain External Resistance (Rext) Engineering, 2007 IEEE Electron Devices Meeting (IEDM) IEDM-latenewsabstract-Sept-17th-07.pdf
 
  •  (21)  A. Domenicucci, J. Li, C. Murray, D. Chidambarrao, A. Madan, J. Holt, and H. M. Nayfeh, " Measuring Channel Strain in MOSFET Devices Using TEM Techniques",  ASME Applied Mechanics and Materials Conference June 3-7, 2007, University of Texas at Austin .
 
  • 20) H. M. Nayfeh, S. Jeng, S. Narasimha, S. Butt, R. Pal, A. Waite, K. Tabakman, J. B. Johnson, J. Liu, J. Holt, T. Adam, A. Madan, A. Domenicucci, "Hole Transport in Nanoscale p-type MOSFET SOI Devices with High Strain" 2007 IEEE Device Research Conference, June 21-23, 2007, University of Notre Dame South Bend, Indiana Hole_Transport_Nanoscale_IBM_NAYFEH_.pdf

          2006

  • (19) S. Narasimha, K. Onishi, H. M. Nayfeh, et al..   “High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography”, 2006 IEEE Electron Devices Meeting IEDM_45nm_technology_2006.pdf

  • (18) H. M.  Nayfeh,   D. V. Singh, J. M. Hergenrother, J. W. Sleight, Z. Ren, O. Dokumaci, L. Black, D. Chidambarrao, R. Venigalla, J. Pan, W. Natzle, B. L. Tessier, J. A. Ott†, M. Khare, K. W. Guarini†, M. Ieong†, W. Haensch, “Effect of Tensile Uniaxial Stress on the Electron Transport Properties of  Deeply-Scaled Fully-Depleted SOI (FD-SOI) n-type MOSFETs, 2006 IEEE Electron Device Letters, Vol. 27, No. 4, April 2006, pp. 288-290 hnayfeh_utsoi_ibm.pdf

       2005

  • (17) W-H. Lee, A.Waite  H. Nii,  H. M. Nayfeh, et al. “High Performance 65 nm SOI Technology with Enhanced Transistor Strain and Advanced-Low-K BEOL, 2005 IEEE Electron Devices Meeting HMN_IEDM_2005.pdf

  • (16) D. V. Singh,  J. M. Hergenrother, J. W.  Sleight, Z. Ren, H. M. Nayfeh,  O. Dokumaci, L.  Black D. Chidambarrao; R. Venigalla, J. Pan,  B. L. Tessier, A. Nomura, J. A. Ott, M. Khare.; K. W. Guarini, M. Ieong, W. Haensch, "Effect of contact liner stress in high-performance FDSOI devices with ultra-thin silicon channels and 30 nm gate lengths", 2005 SOI Conference Proceedings, pp. 178-179, HMN_SOI_2005.pdf

        2004

  • (15) E. P. Gusev, C. Cabral, B. P. Linder, Y. I. Kim, K. Maitra, E. Cartier, H. M. Nayfeh, et al. “Advanced Gate Stacks with Fully Silicided (FUSI) Gates and High-K Dielectrics: Enhanced Performance at Reduced Gate Leakage”, 2004 IEEE Electron Devices Meeting HMN_IEDM_2004.pdf

  • (14) E.P. Gusev, C. Cabral, Y. H. Kim, B. P. Linder, E. Cartier, S.Zafar, P. Jamison, H. Nayfeh, S. Fang, "Fully Silicided (FUSI) Gate Technology as a Metal Gate Option for Advanced CMOS. ECS 2004. HMN_ECS_FUSIpdf.pdf

  • (13) G. Xia, H. M. Nayfeh, M.J. Lee, E. A. Fitzgerald, D.A.Antoniadis, J.L.Hoyt, J.Li, D.H. Anjum, R. Hull “Impact of Ion Implantation Damage and Thermal Budget on Mobility Enhancement in strained Si n-MOSFETs”, IEEE Transactions on Electron Devices,  Dec. 2004, Vol. 51, No. 12, pp. 2136-2144. HMN_implant_damage_ted2005.pdf

  • (12) H. M. Nayfeh, J. L.Hoyt, D.A. Antoniadis, “A Physically-Based Analytical Equation for the Threshold Voltage of strained Si n-MOSFETs”, IEEE Transactions on Electron Devices, Dec. 2004 , Vol. 51, No. 12. HMN_TED_VOL51_NO12_DEC2004.pdf

      2003

  • (11) H. M. Nayfeh, C. W. Leitz, A. J. Pitera, J. L. Hoyt, E. A. Fitzgerald, D. A. Antoniadis, “Influence of High Channel Doping On The Inversion Layer Electron Mobility in Strained-Si n-MOSFETs, April 2003, IEEE Electron Device Letters HMN_EDL_VOL24_NO4_APR2003.pdf.

  • (10) G. Xia, H. M. Nayfeh, M.J. Lee, E. A. Fitzgerald, D.A.Antoniadis, J.L.Hoyt, J.Li, D.H. Anjum, R. Hull “Impact of Ion Implantation Damage and Thermal Budget on Mobility Enhancement in strained Si n-MOSFETs”, 2003 Electronic Materials Conference.

  • (9) H. M. Nayfeh, J. L. Hoyt, D. A. Antoniadis, “Investigation of Scaling Methodology of strained Si n-MOSFETs Using a Calibrated Transport Model, 2003 IEEE Electron Devices Meeting (IEDM).HMN_IEDM_2003.pdf 

  • (8) Z. Cheng, J. Jung, M. L. Lee, H. M. Nayfeh, A. J. Pitera, J. L. Hoyt, E. A. Fitzgerald, D. A. Antoniadis, "SiGe-On-Insulator (SGOI):  Two Structures for CMOS Application, SMA Conference Proceedings 2003. SMA-2003-conf.pdf

        2002

  • (6) H. M. Nayfeh, J. L. Hoyt, C. W. Leitz, A. J. Pitera, E. A. Fitzgerald, D. A. Antoniadis "Electron Inversion Layer Mobility in strained-Si nMOSFETs with high channel doping achived by ion implantation, 2002 Device Research Conference (DRC), Santa Barbara California. HMNDRC2002.pdf

  • (10) J. L. Hoyt, H. M. Nayfeh G. Xia, S. Eguchi, T. Drake, E. A. Fitzgerald, D. A. Antoniadis, “Strained Silicon MOSFET Technology”, 2002 IEEE Electron Devices Meeting HMN_IEDM_2002.pdf

  • (5) H. Wakabayshi, G. Samudra, I. Djomehri, H. M. Nayfeh, D. A. Antoniadis, “Supply-Voltage Optimization for Below 70 nm Technology Node MOSFETs” IEEE Transactions on Semiconductor Manufacturing, Vol. 15, No. 2, p. 151-157, May 2002.ITSM_VOL15_NO2_MAY2002.pdf

  • (4) S. Eguchi, H. M. Nayfeh, C. W. Leitz, E. A. Fitzgerald, J. L. Hoyt, “Diffusion of Ion Implanted N-type Dopants in Silicon Germanium Alloys” 2001 Electronic Materials Conference, EMC. 

       1994-1997

  • (3) W. H. Thompson, Z. Yamani, H. M. Nayfeh, M-A. Hasan, J. E. Greene, M. H. Nayfeh, “Growth of germanium on porous silicon (001)” Advances in Microcrystalline and Nanocrystalline Semiconductors- 1996. Symposium Mater. Soc. 255-260 (1997) Ge_porousSi.pdf

  • (2) J. Hilliard, H. M. Nayfeh, M. H. Nayfeh, Re-establishment of photoluminescence in Cu quenched porous silicon by acid treatment, Journal of Applied Physics, April 15, 1995, Vol. 77, No. 8, pp. 4130-4132. PL_porousSi_HMN_JAP.pdf

  • (1) J. Hilliard, D. Andager, L. Abu Hassan, H. M .Nayfeh, M. H. Nayfeh, "Infrared Spectroscopy and Secondary Ion Mass Spectrometry of Luminescent, nonluminescent, and metal quenched porous silicon", Journal of Applied Physics, August 15, 1994, Vol. 76, No. 4 pp. 2423-2428. char_porousSi_HMN.pdf