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AMD and IBM Detail Early Results Using Immersion and Ultra Low-K in 45nm Chips http://www.physorg.com/news85247225.html At the International Electron Device Meeting today, IBM and AMD presented papers describing the use of immersion lithography, ultra-low-K interconnect dielectrics, and multiple enhanced transistor strain techniques for application to the 45nm microprocessor process generation. AMD and IBM expect the first 45nm products using immersion lithography and ultra-low-K interconnect dielectrics to be available in mid-2008.
EE-TIMES ASML wins 45-nm litho deal at IBM, AMD http://www.eetimes.com/news/semi/showArticle.jhtml?articleID=196603436 SAN FRANCISCO — At the International Electron Devices Meeting (IEDM) here, IBM Corp. and Advanced Micro Devices Inc. presented papers describing the use of immersion lithography, ultra-low-k dielectrics, and multiple enhanced transistor strain techniques for 45-nm microprocessor designs
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