Biswarup`s Webpage

You are welcome

   Profile                         Research                       Publications                      Links                       Photos


 

Hello..........I am from Bankura, West Bengal, India.


Career Highlights:

  • 12 years experimental condensed matter physics and materials science research in academia.
  • 12 years experience in High-resolution TEM including XTEM sample preparation.
  • Practical knowledge of synthesis and characterization methods of nanomaterials.
  • Co-authored over 88 publications in international peer-reviewed journals including Nature Materials, Phys Rev Lett., Chem Comm., J Mater Chem., Appl Phys Lett., Phys Rev B., Nanotech. and J Appl Phys.
  • Presented over 20 research papers in international scientific conferences.
  • Currently over 1250 citations in scientific journals (Citation report).

 

Research Activities:


List of Selected Publications (Peer-reviewed Journals):

On ion beam modification of nanostructured materials:

Title: Magnetism in C-60 films induced by proton irradiation
Author(s): Mathew, S; Satpati, B; Joseph, B, et al.
Source: PHYSICAL REVIEW B Volume: 75 Issue: 7 Article Number: 075426 Published: FEB 2007.

Title: Phase formation within Au and Ge nanoislands by room-temperature ion irradiation
Author(s): Som, T; Satpati, B; Prokert, F, et al.
Source: NANOTECHNOLOGY Volume: 17 Issue: 20 Pages: 5248-5253 Published: OCT 28 2006.

Title: Ion-beam induced transformations in nanoscale multilayers: Evolution of clusters with preferred
length scales
Author(s): Bera, S; Satpati, B; Goswami, DK, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 99 Issue: 7 Article Number: 074301 Published: APR 1 2006.

Title: Size distribution of sputtered particles from Au nanoislands due to MeV self-ion bombardment
Author(s): Satpati, B; Ghatak, J; Satyam, PV, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 98 Issue: 6 Article Number: 064904 Published: SEP 15 2005.

Title: Replicating nanostructures on silicon by low-energy ion beams
Author(s): Satpati, B; Dev, BN
Source: NANOTECHNOLOGY Volume: 16 Issue: 4 Pages: 572-578 Published: APR 2005.

Title: Nanomixing: A way to synthesize surface nanoalloys
Author(s): Som, T; Satpati, B; Satyam, PV, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 97 Issue: 1 Article Number: 014305 Published: JAN 1 2005.

Title: Interface modification in Co/Ge bilayer using swift heavy ions
Author(s): Som, T; Satpati, B; Satyam, PV, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 96 Issue: 12 Pages: 7141-7146 Published: DEC 15 2004.

Title: Ion-beam-induced embedded nanostructures and nanoscale mixing
Author(s): Satpati, B; Satyam, PV; Som, T, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 96 Issue: 9 Pages: 5212-5216 Published: NOV 1 2004.

Title: Nanoscale ion-beam mixing in Au-Si and Ag-Si eutectic systems
Author(s): Satpati, B; Satyam, PV; Som, T, et al.
Source: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (Rapid Comm.) Volume: 79 Issue: 3 Pages: 447-451 Published: AUG 2004.

On quantum dot and multi-quantum-well:

Title: Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy
Author(s): E. Luna, B. Satpati, J.B. Rodriguez, A.N. Baranov, E. Tournié and A. Trampert,
Source: APPLIED PHYSICS LETTERS Volume: 96 Article Number: 021904 Published: 2010.

Title: Transmission Electron Microscopy Study of Sb-Based Quantum Dots
Author(s): Satpati, B; Tasco, V; Deguffroy, N, et al.
Conference Information: 15th Conference on Microscopy of Semiconducting Materials, Date: APR 02-
05, 2007 Univ Cambridge Cambridge ENGLAND
Source: MICROSCOPY OF SEMICONDUCTING MATERIALS 2007 Volume: 120 Pages: 251-254 Published: 2008.

Title: Type II transition in InSb-based nanostructures for midinfrared applications
Author(s): Intartaglia, R; Raino, G; Tasco, V; Satpati, B, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 103 Issue: 11 Article Number: 114516 Published: 2008.

Title: Molecular-beam epitaxy of InSb/GaSb quantum dots
Author(s): Deguffroy, N; Tasco, V; Baranov, AN; Satpati, B, et al.
Source: JOURNAL OF APPLIED PHYSICS Volume: 101 Issue: 12 Article Number: 124309 Published: JUN 15 2007.

Title: Interface analysis of InAs/GaSb superlattice grown by MBE
Author(s): Satpati, B; Rodriguez, JB; Trampert, A, et al.
Conference Information: 14th International Conference on Molecular Beam Epitaxy (MBE XIV), Date:
SEP 03-08, 2006 Waseda Univ Tokyo JAPAN
Source: JOURNAL OF CRYSTAL GROWTH Volume: 301 Pages: 889-892 Published: 2007.

Title: High-density, uniform InSb/GaSb quantum dots emitting in the midinfrared region
Author(s): Tasco, V; Deguffroy, N; Baranov, AN; Satpati, B, et al.
Source: APPLIED PHYSICS LETTERS Volume: 89 Issue: 26 Article Number: 263118 Published: DEC 25 2006.

On magnetic multilayers for spintronics:

Title: Large spin diffusion length in an amorphous organic semiconductor
Author(s): Shim, JH; Raman, KV; Park, YJ; Satpati, B, et al.
Source: PHYSICAL REVIEW LETTERS Volume: 100 Issue: 22 Article Number: 226603 Published: 2008.

Title: Room-temperature tunnel magnetoresistance and spin-polarized tunneling through an organic
semiconductor barrier
Author(s): Santos, TS; Lee, JS; Migdal, P; Satpati, B, et al.
Source: PHYSICAL REVIEW LETTERS Volume: 98 Article Number: 016601 Published: 2007.

Title: Carrier-controlled ferromagnetismin transparent oxide semiconductors
Author(s): Philip, J; Punnoose, A; Kim, BI; Satpati, B, et al.
Source: NATURE MATERIALS Volume: 5 Issue: 4 Pages: 298-304 Published: APR 2006.

Title: Evidence for positive spin polarization in Co with SrTiO3 barriers
Author(s): Thomas, A; Moodera, JS; Satpati, B
Source: JOURNAL OF APPLIED PHYSICS Volume: 97 Issue: 10; Article Number: 10c908 Published: 2005.

Title: High-temperature ferromagnetism in manganese-doped indium-tin oxide films
Author(s): Philip, J; Theodoropoulou, N; Berera, G; Satpati, B, et al.
Source: APPLIED PHYSICS LETTERS Volume: 85 Issue: 5 Pages: 777-779 Published: AUG 2 2004.


 
    E-mail: bsatpati[at]googlemail.com

   

           "Only two things are infinite, the universe and human stupidity, and I'm not sure about the former.”           

                                                                                                                               ------  Albert Einstein